參數(shù)資料
型號(hào): K4H560838E-GCC4
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: DIODE ZENER TRIPLE ISOLATED 200mW 26.97Vz 5mA-Izt 0.02503 0.05uA-Ir 21 SOT-363 3K/REEL
中文描述: 256Mb的電子芯片的DDR 400內(nèi)存規(guī)格60Ball FBGA封裝(x4/x8)
文件頁數(shù): 14/19頁
文件大?。?/td> 171K
代理商: K4H560838E-GCC4
DDR SDRAM
DDR SDRAM 256Mb F-die (x8, x16)
Rev. 1.1 August. 2003
Overshoot/Undershoot specification for Data, Strobe, and Mask Pins
Parameter
Specification
DDR400
1.2V
1.2V
2.5V-ns
2.5V-ns
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
The area between the overshoot signal and VDD must be less than or equal to
The area between the undershoot signal and GND must be less than or equal to
5
4
3
2
1
0
-1
-2
-3
-4
-5
0
0.5 1.0 1.42 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.68 6.0 6.5 7.0
VDDQ
Overshoot
Maximum Amplitude = 1.2V
Area = 2.5V-ns
Maximum Amplitude = 1.2V
undershoot
GND
V
Tims(ns)
DQ/DM/DQS AC overshoot/Undershoot Definition
相關(guān)PDF資料
PDF描述
K4H560838E-GCCC DIODE ZENER TRIPLE ISOLATED 200mW 29.77Vz 5mA-Izt 0.02503 0.05uA-Ir 23 SOT-363 3K/REEL
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4H560838E-GCCC 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR 400 SDRAM Specification 60Ball FBGA (x4/x8)
K4H560838E-GLA2 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
K4H560838E-GLB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
K4H560838E-GLB3 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
K4H560838E-NC/LA2 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)