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參數(shù)資料
| 型號： | K4H560838E-GCC4 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | DIODE ZENER TRIPLE ISOLATED 200mW 26.97Vz 5mA-Izt 0.02503 0.05uA-Ir 21 SOT-363 3K/REEL |
| 中文描述： | 256Mb的電子芯片的DDR 400內(nèi)存規(guī)格60Ball FBGA封裝（x4/x8） |
| 文件頁數(shù)： | 19/19頁 |
| 文件大小： | 171K |
| 代理商： | K4H560838E-GCC4 |
DDR SDRAM
DDR SDRAM 256Mb F-die (x8, x16)
Rev. 1.1 August. 2003
j. Table 3 is used to increase tDS and tDH in the case where the I/O slew rate is below 0.5 V/ns. The I/O slew rate is based on the lesser
on the lesser of the AC - AC slew rate and the DC- DC slew rate. The inut slew rate is based on the lesser of the slew rates deter
mined by either VIH(ac) to VIL(ac) or VIH(DC) to VIL(DC), and similarly for rising transitions.
k. DQS, DM, and DQ input slew rate is specified to prevent double clocking of data and preserve setup and hold times. Signal transi
tions through the DC region must be monotony.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4H560838E-GCCC | DIODE ZENER TRIPLE ISOLATED 200mW 29.77Vz 5mA-Izt 0.02503 0.05uA-Ir 23 SOT-363 3K/REEL |
| K4H560838E-GLA2 | DIODE ZENER TRIPLE ISOLATED 200mW 32.97Vz 5mA-Izt 0.02503 0.05uA-Ir 27 SOT-363 3K/REEL |
| K4H560838E-NCA2 | 256Mb E-die DDR SDRAM Specification 54pin sTSOP(II) |
| K4J55323QF-GC | 256Mbit GDDR3 SDRAM |
| K4J55323QF-GC14 | 256Mbit GDDR3 SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4H560838E-GCCC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR 400 SDRAM Specification 60Ball FBGA (x4/x8) |
| K4H560838E-GLA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8) |
| K4H560838E-GLB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8) |
| K4H560838E-GLB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8) |
| K4H560838E-NC/LA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 54pin sTSOP(II) |
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