參數(shù)資料
型號: K4H560838E-ZCB3
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)
中文描述: 256Mb的電子芯片與DDR SDRAM的規(guī)格鉛60 FBGA封裝,免費(符合RoHS)
文件頁數(shù): 14/19頁
文件大?。?/td> 171K
代理商: K4H560838E-ZCB3
DDR SDRAM
DDR SDRAM 256Mb F-die (x8, x16)
Rev. 1.1 August. 2003
Overshoot/Undershoot specification for Data, Strobe, and Mask Pins
Parameter
Specification
DDR400
1.2V
1.2V
2.5V-ns
2.5V-ns
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
The area between the overshoot signal and VDD must be less than or equal to
The area between the undershoot signal and GND must be less than or equal to
5
4
3
2
1
0
-1
-2
-3
-4
-5
0
0.5 1.0 1.42 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.68 6.0 6.5 7.0
VDDQ
Overshoot
Maximum Amplitude = 1.2V
Area = 2.5V-ns
Maximum Amplitude = 1.2V
undershoot
GND
V
Tims(ns)
DQ/DM/DQS AC overshoot/Undershoot Definition
相關(guān)PDF資料
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