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參數(shù)資料
| 型號： | K4H560838E-ZLA2 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 元件分類： | 圓形連接器 |
| 英文描述： | Rectangular Industrial Connector Housing; Series:C-146; No. of Contacts:10; Gender:Female; Body Material:Aluminum Alloy; Connecting Termination:Screw; For Use With:C146 Rectangular Circular Connectors; Operating Voltage:400V RoHS Compliant: Yes |
| 中文描述： | 256Mb的電子芯片與DDR SDRAM的規(guī)格鉛60 FBGA封裝，免費（符合RoHS） |
| 文件頁數(shù)： | 6/19頁 |
| 文件大?。?/td> | 171K |
| 代理商： | K4H560838E-ZLA2 |
DDR SDRAM
DDR SDRAM 256Mb F-die (x8, x16)
Rev. 1.1 August. 2003
Bank Select
Timing Register
A
R
R
R
C
Data Input Register
Serial to parallel
4Mx16 / 2Mx32
4Mx16 / 2Mx32
4Mx16 / 2Mx32
4Mx16 / 2Mx32
S
2
O
I
Column Decoder
Latency & Burst Length
Programming Register
D
S
G
CK, CK
ADD
LCKE
CK, CK
CKE
CS
RAS
CAS
WE
LCAS
LRAS
LCBR
LWE
LWCBR
L
L
CK, CK
32
32
16
16
x16
DQi
Data Strobe
Block Diagram (8Mb x 8 / 4Mb x 16 I/O x 4 Banks)
(L)WE
L(U)DM
L(U)DM
CK, CK
DM Input Register
L(U)DM
相關PDF資料 |
PDF描述 |
|---|---|
| K4H560838E-ZCB0 | CAP, 10NF 1KV 10%, SMT, 1812 |
| K4H560838E-ZCB3 | 256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant) |
| K4H560838E-GLB0 | DIODE ZENER TRIPLE ISOLATED 200mW 36.28Vz 5mA-Izt 0.02522 0.05uA-Ir 30 SOT-363 3K/REEL |
| K4H560838E-GLB3 | DIODE ZENER TRIPLE ISOLATED 200mW 39.13Vz 5mA-Izt 0.02518 0.05uA-Ir 30 SOT-363 3K/REEL |
| K4H560838M-TCA0 | 128Mb DDR SDRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K4H560838E-ZLB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant) |
| K4H560838E-ZLB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant) |
| K4H560838F-TC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb F-die DDR400 SDRAM Specification |
| K4H560838F-TC/LA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb F-die DDR SDRAM Specification |
| K4H560838F-TC/LAA | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb F-die DDR SDRAM Specification |
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