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參數(shù)資料
| 型號(hào)： | K4M64163PK-BE900 |
| 元件分類： | DRAM |
| 英文描述： | 4M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 |
| 封裝： | LEAD FREE, FBGA-54 |
| 文件頁(yè)數(shù)： | 7/12頁(yè) |
| 文件大?。?/td> | 114K |
| 代理商： | K4M64163PK-BE900 |
K4M64163PK - R(B)E/G/C/F
October 2005
4
Mobile-SDRAM
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -25
°C ~ 85°C for Extended, -25°C ~ 70°C for Commercial)
NOTES :
1. Under all conditions VDDQ must be less than or equal to VDD.
2. VIH (max) = 2.2V AC.The overshoot voltage duration is
≤ 3ns.
3. VIL (min) = -1.0V AC. The undershoot voltage duration is
≤ 3ns.
4. Any input 0V
≤ VIN ≤ VDDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with tri-state outputs.
5. Dout is disabled, 0V
≤ VOUT ≤ VDDQ.
Parameter
Symbol
Min
Typ
Max
Unit
Note
Supply voltage
VDD
1.7
1.8
1.95
V
1
VDDQ
1.7
1.8
1.95
V
1
Input logic high voltage
VIH
0.8 x VDDQ
1.8
VDDQ + 0.3
V
2
Input logic low voltage
VIL
-0.3
0
0.3
V
3
Output logic high voltage
VOH
VDDQ -0.2
-
V
IOH = -0.1mA
Output logic low voltage
VOL
-
0.2
V
IOL = 0.1mA
Input leakage current
ILI
-2
-
2
uA
4
CAPACITANCE (VDD = 1.8V, TA = 23°C, f = 1MHz, VREF =0.9V ± 50 mV)
Pin
Symbol
Min
Max
Unit
Note
Clock
CCLK
1.5
3.5
pF
RAS, CAS, WE, CS, CKE, DQM
CIN
1.5
3.0
pF
Address
CADD
1.5
3.0
pF
DQ0 ~ DQ15
COUT
2.0
4.5
pF
ABSOLUTE MAXIMUM RATINGS
NOTES:
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Parameter
Symbol
Value
Unit
Voltage on any pin relative to Vss
VIN, VOUT
-1.0 ~ 2.6
V
Voltage on VDD supply relative to Vss
VDD, VDDQ
-1.0 ~ 2.6
V
Storage temperature
TSTG
-55 ~ +150
°C
Power dissipation
PD
1.0
W
Short circuit current
IOS
50
mA
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