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參數(shù)資料
| 型號： | K4M64163PK-BE900 |
| 元件分類： | DRAM |
| 英文描述： | 4M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 |
| 封裝： | LEAD FREE, FBGA-54 |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 114K |
| 代理商： | K4M64163PK-BE900 |
K4M64163PK - R(B)E/G/C/F
October 2005
5
Mobile-SDRAM
DC CHARACTERISTICS
Recommended operating conditions(Voltage referenced to VSS = 0V, TA = -25
°C ~ 85°C for Extended, -25°C ~ 70°C for Commercial)
NOTES:
1. Measured with outputs open.
2. Refresh period is 64ms.
3. It has +/-5
°C tolerance.
4. K4M64163PK-R(B)E/C**
5. K4M64163PK-R(B)G/F**
6. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).
Parameter
Symbol
Test Condition
Version
Unit
Note
-75
-90
-1L
Operating Current
(One Bank Active)
ICC1
Burst length = 1
tRC
≥ tRC(min)
IO = 0 mA
30
mA
1
Precharge Standby Current in
power-down mode
ICC2P
CKE
≤ VIL(max), tCC = 10ns
0.3
mA
ICC2PS
CKE & CLK
≤ VIL(max), tCC = ∞
0.3
Precharge Standby Current
in non power-down mode
ICC2N
CKE
≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
6.5
mA
ICC2NS
CKE
≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
1
Active Standby Current
in power-down mode
ICC3P
CKE
≤ VIL(max), tCC = 10ns
5
mA
ICC3PS
CKE & CLK
≤ VIL(max), tCC = ∞
2
Active Standby Current
in non power-down mode
(One Bank Active)
ICC3N
CKE
≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
12
mA
ICC3NS
CKE
≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
4
mA
Operating Current
(Burst Mode)
ICC4
IO = 0 mA
Page burst
4Banks Activated
tCCD = 2CLKs
50
45
mA
1
Refresh Current
ICC5
tARFC
≥ tARFC(min)
50
mA
2
Self Refresh Current
CC6
CKE
≤ 0.2V
TCSR
45 *3
85/70
°C
-E/C
Full
140
220
uA
4
1/2 of
130
190
1/4 of
125
175
-G/F
Full
90
180
5
1/2 of
80
150
1/4 of
75
135
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4M64163PK-BF1L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4M64163PK-BF75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4M64163PK-BF90 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4M64163PK-BG1L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4M64163PK-BG75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
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