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參數(shù)資料
| 型號： | K6R4016C1C-I10 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx16 Bit High Speed Static RAM(5V Operating). |
| 中文描述： | 256Kx16位高速靜態(tài)RAM（5V的工作）。 |
| 文件頁數(shù)： | 2/11頁 |
| 文件大?。?/td> | 184K |
| 代理商： | K6R4016C1C-I10 |
K6R4016C1C-C, K6R4016C1C-E, K6R4016C1C-I
CMOS SRAM
PRELIMPreliminaryPPPPPPPPPINARY
Rev 4.0
- 2 -
September 2001
256K x 16 Bit High-Speed CMOS Static RAM
The K6R4016C1C is a 4,194,304-bit high-speed Static Ran-
dom Access Memory organized as 262,144 words by 16 bits.
The K6R4016C1C uses 16 common input and output lines and
has an output enable pin which operates faster than address
access time at read cycle. Also it allows that lower and upper
byte access by data byte control(UB, LB). The device is fabri-
cated using SAMSUNG
′
s advanced CMOS process and
designed for high-speed circuit technology. It is particularly well
suited for use in high-density high-speed system applications.
The K6R4016C1C is packaged in a 400mil 44-pin plastic SOJ
or TSOP(II) forward or 48 Fine pitch BGA.
GENERAL DESCRIPTION
FEATURES
Fast Access Time 10,12,15ns(Max.)
Low Power Dissipation
Standby (TTL) : 60mA(Max.)
(CMOS) : 10mA(Max.)
Operating K6R4016C1C-10 : 185mA(Max.)
K6R4016C1C-12 : 175mA(Max.)
K6R4016C1C-15 : 165mA(Max.)
Single 5.0V
±
10% Power Supply
TTL Compatible Inputs and Outputs
I/O Compatible with 3.3V Device
Fully Static Operation
- No Clock or Refresh required
Three State Outputs
Center Power/Ground Pin Configuration
Data Byte Control : LB : I/O1~ I/O8, UB : I/O9~ I/O16
Standard Pin Configuration
K6R4016C1C-J : 44-SOJ-400
K6R4016C1C-T : 44-TSOP2-400BF
K6R4016C1C-F : 48-Fine pitch BGA with 0.75 Ball pitch
Clk Gen.
I/O
1
~I/O
8
OE
UB
LB
CS
FUNCTIONAL BLOCK DIAGRAM
R
Data
Cont.
Data
Cont.
Column Select
CLK
Gen.
Pre-Charge Circuit
Memory Array
1024 Rows
256 x 16 Columns
I/O Circuit &
I/O
9
~I/O
16
WE
K6R4016C1C-C10/C12/C15
Commercial Temp.
K6R4016C1C-E10/E12/E15
Extended Temp.
K6R4016C1C-I10/I12/I15
Industrial Temp.
ORDERING INFORMATION
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
A
10
A
11
A
12
A
13
A
14
A
15
A
16
A
17
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K6R4016C1C-I12 | 256Kx16 Bit High Speed Static RAM(5V Operating). |
| K6R4016C1C-I15 | 256Kx16 Bit High Speed Static RAM(5V Operating). |
| K6R4016C1CE12 | 256Kx16 Bit High Speed Static RAM(5V Operating). |
| K6R4016C1CE15 | 256Kx16 Bit High Speed Static RAM(5V Operating). |
| K6R4016V1 | 1Mx4 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6R4016C1C-I12 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 Bit High Speed Static RAM(5V Operating). |
| K6R4016C1C-I15 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx16 Bit High Speed Static RAM(5V Operating). |
| K6R4016C1C-TC15000 | 制造商:Samsung SDI 功能描述:GT |
| K6R4016C1D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges |
| K6R4016C1D-EC0810 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx4 Bit High Speed Static RAM(5.0V Operating) |
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