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| 型號(hào)： | K6R4016C1C-I10 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Kx16 Bit High Speed Static RAM(5V Operating). |
| 中文描述： | 256Kx16位高速靜態(tài)RAM（5V的工作）。 |
| 文件頁(yè)數(shù)： | 4/11頁(yè) |
| 文件大小： | 184K |
| 代理商： | K6R4016C1C-I10 |
K6R4016C1C-C, K6R4016C1C-E, K6R4016C1C-I
CMOS SRAM
PRELIMPreliminaryPPPPPPPPPINARY
Rev 4.0
- 4 -
September 2001
RECOMMENDED DC OPERATING CONDITIONS*
(T
A
=0 to 70
°
C)
* The above parameters are also guaranteed at extended and industrial temperature range.
** V
IL
(Min) = -2.0V a.c(Pulse Width
≤
8ns) for I
≤
20mA
.
*** V
IH
(Max) = V
CC
+ 2.0V a.c (Pulse Width
≤
8ns) for I
≤
20mA.
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
V
CC
4.5
5.0
5.5
V
Ground
V
SS
0
0
0
V
Input High Voltage
V
IH
2.2
-
V
CC
+0.5***
V
Input Low Voltage
V
IL
-0.5**
-
0.8
V
DC AND OPERATING CHARACTERISTICS*
(T
A
=0 to 70
°
C, Vcc= 5.0V
±
10%, unless otherwise specified)
* The above parameters are also guaranteed at extended and industrial temperature range.
** V
CC
=5.0V
±
5%
,
Temp.=25
°
C.
Parameter
Symbol
Test Conditions
Min
Max
Unit
Input Leakage Current
I
LI
V
IN
=V
SS
to
V
CC
-2
2
μ
A
μ
A
Output Leakage Current
I
LO
CS=V
IH
or OE=V
IH
or WE=V
IL
V
OUT
= V
SS
to
V
CC
-2
2
Operating Current
I
CC
Min. Cycle, 100% Duty
CS=V
IL,
V
IN
=V
IH
or
V
IL,
I
OUT
=0mA
Com.
10ns
-
185
mA
12ns
-
175
15ns
-
165
Ext.
Ind.
10ns
-
200
12ns
-
190
15ns
-
180
Standby Current
I
SB
Min. Cycle, CS=V
IH
-
60
mA
I
SB1
f=0MHz, CS
≥
V
CC
-0.2V,
V
IN
≥
V
CC
-0.2V or V
IN
≤
0.2V
-
10
Output Low Voltage Level
V
OL
I
OL
=8mA
-
0.4
V
Output High Voltage Level
V
OH
I
OH
=-4mA
2.4
-
V
V
OH1**
I
OH1
=-0.1mA
-
3.95
V
CAPACITANCE*
(T
A
=25
°
C, f=1.0MHz)
* Capacitance is sampled and not 100% tested.
Item
Symbol
Test Conditions
MIN
Max
Unit
Input/Output Capacitance
C
I/O
V
I/O
=0V
-
8
pF
Input Capacitance
C
IN
V
IN
=0V
-
7
pF
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