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| 型號(hào)： | K7B323625M-QC65 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 1Mx36 & 2Mx18 Synchronous SRAM |
| 中文描述： | 1Mx36 |
| 文件頁(yè)數(shù)： | 9/19頁(yè) |
| 文件大?。?/td> | 264K |
| 代理商： | K7B323625M-QC65 |
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K7B321825M
1Mx36 & 2Mx18 Synchronous SRAM
- 9 -
Rev 2.0
Nov. 2003
K7B323625M
V
SS
V
IH
V
SS-
1.0V
20% t
CYC
(MIN)
(V
DD
=3.3V+0.165V/-0.165V,V
DDQ
=3.3V+0.165/-0.165V or V
DD
=3.3V+0.165V/-0.165V,V
DDQ
=2.5V+0.4V/-0.125V, T
A
=0to70
°
C)
PARAMETER
TEST CONDITIONS
VALUE
Input Pulse Level(for 3.3V I/O)
0 to 3.0V
Input Pulse Level(for 2.5V I/O)
0 to 2.5V
Input Rise and Fall Time(Measured at 20% to 80% for 3.3V I/O)
1.0V/ns
Input Rise and Fall Time(Measured at 20% to 80% for 2.5V I/O)
1.0V/ns
Input and Output Timing Reference Levels for 3.3V I/O
1.5V
Input and Output Timing Reference Levels for 2.5V I/O
V
DDQ
/2
Output Load
See Fig. 1
DC ELECTRICAL CHARACTERISTICS
(V
DD
=3.3V+0.165V/-0.165V, T
A
=0
°
C to +70
°
C)
Notes :
1. Reference AC Operating Conditions and Characteristics for input and timing.
2. Data states are all zero.
3. In Case of I/O Pins, the Max. V
IH
=V
DDQ
+0.3V
Parameter
Symbol
Test Conditions
Min
Max
Unit
Notes
Input Leakage Current(except ZZ)
I
IL
V
DD
=Max ; V
IN
=V
SS
to V
DD
-2
+2
μ
A
Output Leakage Current
I
OL
Output Disabled, V
out
=V
SS
to V
DDQ
-2
+2
μ
A
Operating Current
I
CC
Device Selected, I
OUT
=0mA,
ZZ
≤
V
IL ,
Cycle Time
≥
t
CYC
Min
-65
-
310
mA
1,2
-75
-
290
Standby Current
I
SB
Device deselected, I
OUT
=0mA,
ZZ
≤
V
IL
, f=Max, All Inputs
≤
0.2V or
≥
V
DD
-0.2V
-65
-
140
mA
-75
-
130
I
SB1
Device deselected, I
OUT
=0mA,
ZZ
≤
0.2V, f=0,
All Inputs=fixed (V
DD
-0.2V or
-
110
mA
I
SB2
Device deselected, I
OUT
=0mA,
ZZ
≥
V
DD
-0.2V, f=Max, All
Inputs
≤
V
IL
or
≥
V
IH
-
100
mA
Output Low Voltage(3.3V I/O)
V
OL
I
OL
=8.0mA
-
0.4
V
Output High Voltage(3.3V I/O)
V
OH
I
OH
=-4.0mA
2.4
-
V
Output Low Voltage(2.5V I/O)
V
OL
I
OL
=1.0mA
-
0.4
V
Output High Voltage(2.5V I/O)
V
OH
I
OH
=-1.0mA
2.0
-
V
Input Low Voltage(3.3V I/O)
V
IL
-0.3*
0.8
V
Input High Voltage(3.3V I/O)
V
IH
2.0
V
DD
+0.3**
V
3
Input Low Voltage(2.5V I/O)
V
IL
-0.3*
0.7
V
Input High Voltage(2.5V I/O)
V
IH
1.7
V
DD
+0.3**
V
3
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