參數(shù)資料
型號： K7B801825B
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 256Kx36 & 512Kx18-Bit Synchronous Burst SRAM
中文描述： 256Kx36
文件頁數(shù)： 9/19頁
文件大?。?/td> 439K
代理商： K7B801825B
K7B801825B
256Kx36 & 512Kx18 Synchronous SRAM
- 9 -
Rev 3.0
Nov. 2003
K7B803625B
V
SS
V
IH
V
SS-
1.0V
20% t
CYC
(MIN)
DC ELECTRICAL CHARACTERISTICS
(V
DD
=3.3V+0.165V/-0.165V, T
A
=0
°
C to +70
°
C)
Notes :
The above parameters are also guaranteed at industrial temperature range.
1. Reference AC Operating Conditions and Characteristics for input and timing.
2. Data states are all zero.
3. In Case of I/O Pins, the Max. V
IH
=V
DDQ
+0.3V
Parameter
Symbol
Test Conditions
Min
Max
Unit
Notes
Input Leakage Current(except ZZ)
I
IL
V
DD
=Max ; V
IN
=V
SS
to V
DD
-2
+2
μ
A
Output Leakage Current
I
OL
Output Disabled, V
out
=V
SS
to V
DDQ
-2
+2
μ
A
Operating Current
I
CC
Device Selected, I
OUT
=0mA,
ZZ
≤
V
IL ,
Cycle Time
≥
t
CYC
Min
-65
-
300
mA
1,2
-75
-
280
Standby Current
I
SB
Device deselected, I
OUT
=0mA,
ZZ
≤
V
IL
, f=Max, All Inputs
≤
0.2V or
≥
V
DD
-0.2V
Device deselected, I
OUT
=0mA, ZZ
≤
0.2V, f=0,
All Inputs=fixed (V
DD
-0.2V or 0.2V)
-65
-
140
mA
-75
-
130
I
SB1
-
100
mA
I
SB2
Device deselected, I
OUT
=0mA, ZZ
≥
V
DD
-0.2V,
f=Max, All Inputs
≤
V
IL
or
≥
V
IH
-
60
mA
Output Low Voltage(3.3V I/O)
V
OL
I
OL
=8.0mA
-
0.4
V
Output High Voltage(3.3V I/O)
V
OH
I
OH
=-4.0mA
2.4
-
V
Output Low Voltage(2.5V I/O)
V
OL
I
OL
=1.0mA
-
0.4
V
Output High Voltage(2.5V I/O)
V
OH
I
OH
=-1.0mA
2.0
-
V
Input Low Voltage(3.3V I/O)
V
IL
-0.3*
0.8
V
Input High Voltage(3.3V I/O)
V
IH
2.0
V
DD
+0.3
V
3
Input Low Voltage(2.5V I/O)
V
IL
-0.3*
0.7
V
Input High Voltage(2.5V I/O)
V
IH
1.7
V
DD
+0.3
V
3
(V
DD
=3.3V+0.165V/-0.165V,V
DDQ
=3.3V+0.165/-0.165V or V
DD
=3.3V+0.165V/-0.165V,V
DDQ
=2.5V+0.4V/-0.125V, T
A
=0to70
°
C)
PARAMETER
TEST CONDITIONS
* The above parameters are also guaranteed at industrial temperature range.
VALUE
Input Pulse Level(for 3.3V I/O)
0 to 3.0V
Input Pulse Level(for 2.5V I/O)
0 to 2.5V
Input Rise and Fall Time(Measured at 20% to 80% for 3.3V I/O)
1.0V/ns
Input Rise and Fall Time(Measured at 20% to 80% for 2.5V I/O)
1.0V/ns
Input and Output Timing Reference Levels for 3.3V I/O
1.5V
Input and Output Timing Reference Levels for 2.5V I/O
V
DDQ
/2
Output Load
See Fig. 1
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