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參數(shù)資料
| 型號： | K7I163682B-FC20 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | GT 35C 35#16 PIN PLUG RTANG |
| 中文描述： | 512Kx36位，1Mx18位首席信息官b2條DDRII的SRAM |
| 文件頁數(shù)： | 12/17頁 |
| 文件大小： | 378K |
| 代理商： | K7I163682B-FC20 |
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
- 12 -
Rev 3.1
July. 2004
K7I163682B
K7I161882B
APPLICATION INRORMATION
THERMAL RESISTANCE
Note
: Junction temperature is a function of on-chip power dissipation, package thermal impedance, mounting site temperature and mounting site
thermal impedance. T
J
=T
A
+ P
D
x
θ
JA
PRMETER
SYMBOL
TYP
UNIT
°
C
/W
°
C
/W
NOTE
Junction to Ambient
θ
JA
θ
JC
17.1
Junction to Case
3.3
PIN CAPACITANCE
Note
: 1. Parameters are tested with RQ=250
and V
DDQ
=1.5V.
2. Periodically sampled and not 100% tested.
PRMETER
SYMBOL
TESTCONDITION
TYP
MAX
UNIT
NOTE
Address Control Input Capacitance
C
IN
V
IN
=0V
4
5
pF
Input and Output Capacitance
C
OUT
V
OUT
=0V
6
7
pF
Clock Capacitance
C
CLK
-
5
6
pF
SRAM#1
D
SA
R W BW
0
Q
K
CQ
K
C C
SRAM#4
R
Vt
Vt
Vt
R=50
Vt=V
REF
Vt
Vt
R
R=250
BW
1
D
SA
RW BW
0
Q
K
C C
BW
1
K
Data In
Data Out
Address
R
W
BW
Return CLK
Source CLK
Return CLK
Source CLK
MEMORY
CONTROLLER
CQ
ZQ R=250
CQ
CQ
ZQ
SRAM1 Input CQ
SRAM1 Input CQ
SRAM4 Input CQ
SRAM4 Input CQ
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K7I163682B-FC25 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM |
| K7I163682B-FC30 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM |
| K7I163684B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36 & 1Mx18 DDRII CIO b4 SRAM |
| K7I163684B-EC25000 | 制造商:Samsung Semiconductor 功能描述: |
| K7I321882C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx36 & 2Mx18 DDRII CIO b2 SRAM |
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