參數(shù)資料
型號(hào)： K7I163682B-FC20
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： GT 35C 35#16 PIN PLUG RTANG
中文描述： 512Kx36位，1Mx18位首席信息官b2條DDRII的SRAM
文件頁(yè)數(shù)： 7/17頁(yè)
文件大小： 378K
代理商： K7I163682B-FC20
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
- 7 -
Rev 3.1
July. 2004
K7I163682B
K7I161882B
STATE DIAGRAM
Notes
: 1. Internal burst counter is fixed as 2-bit linear, i.e. when first address is A0+0, next internal burst address is A0+1.
2. "LOAD" refers to read new address active status with LD=Low, "LOAD" refers to read new address inactive status with LD=High.
3. "READ" refers to read active read status with R/W=High, "WRITE" refers to write active status with R/W=Low
LOAD
LOAD
LOAD
LOAD
POWER-UP
NOP
LOAD NEW ADDRESS
DDR READ
DDR WRITE
LOAD
LOAD
READ
WRITE
LINEAR BURST SEQUENCE TABLE
BURST SEQUENCE
Case 1
SA
0
0
1
Case 2
SA
0
1
0
First Address
Second Address
相關(guān)PDF資料
PDF描述
K7I163682B-FC25 512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM
K7I163682B-FC30 512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM
K7I643684M-FCI20 72Mb DDRII SRAM Specification
K7I641884M 72Mb DDRII SRAM Specification
K7I641884M-CE25 72Mb DDRII SRAM Specification
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K7I163682B-FC25 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM
K7I163682B-FC30 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM
K7I163684B 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36 & 1Mx18 DDRII CIO b4 SRAM
K7I163684B-EC25000 制造商:Samsung Semiconductor 功能描述:
K7I321882C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx36 & 2Mx18 DDRII CIO b2 SRAM
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