- 您現(xiàn)在的位置：買(mǎi)賣IC網(wǎng) > PDF目錄373080 > K7I163682B-FC20 (SAMSUNG SEMICONDUCTOR CO. LTD.) GT 35C 35#16 PIN PLUG RTANG PDF資料下載
參數(shù)資料
| 型號(hào)： | K7I163682B-FC20 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | GT 35C 35#16 PIN PLUG RTANG |
| 中文描述： | 512Kx36位，1Mx18位首席信息官b2條DDRII的SRAM |
| 文件頁(yè)數(shù)： | 8/17頁(yè) |
| 文件大?。?/td> | 378K |
| 代理商： | K7I163682B-FC20 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)當(dāng)前第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
- 8 -
Rev 3.1
July. 2004
K7I163682B
K7I161882B
WRITE TRUTH TABLE
(x18)
Notes:
1. X means "Don
′
t Care".
2. All inputs in this table must meet setup and hold time around the rising edge of input clock K or K (
↑
).
3. Assumes a WRITE cycle was initiated.
4. This table illustates operation for x18 devices.
K
K
BW
0
BW
1
OPERATION
↑
L
L
WRITE ALL BYTEs ( K
↑
)
WRITE ALL BYTEs ( K
↑
)
WRITE BYTE 0 ( K
↑
)
WRITE BYTE 0 ( K
↑
)
WRITE BYTE 1 ( K
↑
)
WRITE BYTE 1 ( K
↑
)
WRITE NOTHING ( K
↑
)
WRITE NOTHING ( K
↑
)
↑
L
L
↑
L
H
↑
L
H
↑
H
L
↑
H
L
↑
H
H
↑
H
H
WRITE TRUTH TABLE
(x36)
Notes:
1. X means "Don
′
t Care".
2. All inputs in this table must meet setup and hold time around the rising edge of input clock K or K (
↑
).
3. Assumes a WRITE cycle was initiated.
K
K
BW
0
BW
1
BW
2
BW
3
OPERATION
↑
L
L
L
L
WRITE ALL BYTEs ( K
↑
)
WRITE ALL BYTEs ( K
↑
)
WRITE BYTE 0 ( K
↑
)
WRITE BYTE 0 ( K
↑
)
WRITE BYTE 1 ( K
↑
)
↑
L
L
L
L
↑
L
H
H
H
↑
L
H
H
H
↑
H
L
H
H
↑
H
L
H
H
WRITE BYTE 1 ( K
↑
)
WRITE BYTE 2 and BYTE 3 ( K
↑
)
WRITE BYTE 2 and BYTE 3 ( K
↑
)
WRITE NOTHING ( K
↑
)
WRITE NOTHING ( K
↑
)
↑
H
H
L
L
↑
H
H
L
L
↑
H
H
H
H
↑
H
H
H
H
TRUTH TABLES
SYNCHRONOUS TRUTH TABLE
Notes:
1. X means "Don
′
t Care".
2. The rising edge of clock is symbolized by (
↑
).
3. Before enter into clock stop status, all pending read and write operations will be completed.
K
LD
R/W
Q
OPERATION
Q(A0)
Q(A1)
Stopped
X
X
Previous state
Previous state
Clock Stop
↑
H
X
High-Z
High-Z
No Operation
↑
L
H
Q
OUT
at C(t+1)
Q
OUT
at C(t+2)
Read
↑
L
L
Din at K(t+1)
Din at K(t+1)
Write
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K7I163682B-FC25 | 512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM |
| K7I163682B-FC30 | 512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM |
| K7I643684M-FCI20 | 72Mb DDRII SRAM Specification |
| K7I641884M | 72Mb DDRII SRAM Specification |
| K7I641884M-CE25 | 72Mb DDRII SRAM Specification |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K7I163682B-FC25 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM |
| K7I163682B-FC30 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM |
| K7I163684B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Kx36 & 1Mx18 DDRII CIO b4 SRAM |
| K7I163684B-EC25000 | 制造商:Samsung Semiconductor 功能描述: |
| K7I321882C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx36 & 2Mx18 DDRII CIO b2 SRAM |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。