參數(shù)資料
型號(hào)： K7N403601A
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 128Kx36 & 256Kx18-Bit Pipelined NtRAMTM
中文描述： 128K × 36至
文件頁數(shù)： 10/17頁
文件大?。?/td> 387K
代理商： K7N403601A
K7N403601A
K7N401801A
128Kx36 & 256Kx18 Pipelined N
t
RAM
TM
- 10 -
Rev 1.0
May 2000
AC TIMING CHARACTERISTICS
(V
DD
=3.3V+0.165V/-0.165V, T
A
=0
°
C to +70
°
C)
Notes
:
1. All address inputs must meet the specified setup and hold times for all rising clock(CLK) edges when ADV is sampled low and CS is sampled
low. All other synchronous inputs must meet the specified setup and hold times whenever this device is chip selected.
2. Chip selects must be valid at each rising edge of CLK(when ADV is Low) to remain enabled.
3. A write cycle is defined by WE low having been registered into the device at ADV Low, A Read cycle is defined by WE High with ADV Low,
Both cases must meet setup and hold times.
4. To avoid bus contention, At a given voltage and temperature t
LZC
is more than t
HZC.
The specs as shown do not imply bus contention because t
LZC
is a Min. parameter that is worst case at totally different test conditions
(0
°
C,3.465V) than t
HZC
, which is a Max. parameter(worst case at 70
°
C,3.135V)
It is not possible for two SRAMs on the same board to be at such different voltage and temperature.
PARAMETER
Symbol
-16
-15
-13
UNIT
Min
Max
Min
Max
Min
Max
Cycle Time
tCYC
6.0
-
6.7
-
7.5
-
ns
Clock Access Time
tCD
-
3.5
-
3.8
-
4.2
ns
Output Enable to Data Valid
tOE
-
3.5
-
3.8
-
4.2
ns
Clock High to Output Low-Z
tLZC
1.5
-
1.5
-
1.5
-
ns
Output Hold from Clock High
tOH
1.5
-
1.5
-
1.5
-
ns
Output Enable Low to Output Low-Z
tLZOE
0
-
0
-
0
-
ns
Output Enable High to Output High-Z
tHZOE
-
3.5
-
3.5
-
3.8
ns
Clock High to Output High-Z
tHZC
-
3.5
-
3.5
-
3.8
ns
Clock High Pulse Width
tCH
2.5
-
2.5
-
3.0
-
ns
Clock Low Pulse Width
tCL
2.5
-
2.5
-
3.0
-
ns
Address Setup to Clock High
tAS
1.5
-
1.5
-
1.5
-
ns
CKE Setup to Clock High
tCES
1.5
-
1.5
-
1.5
-
ns
Data Setup to Clock High
tDS
1.5
-
1.5
-
1.5
-
ns
Write Setup to Clock High (WE, BWX)
tWS
1.5
-
1.5
-
1.5
-
ns
Address Advance Setup to Clock High
tADVS
1.5
-
1.5
-
1.5
-
ns
Chip Select Setup to Clock High
tCSS
1.5
-
1.5
-
1.5
-
ns
Address Hold from Clock High
tAH
0.5
-
0.5
-
0.5
-
ns
CKE Hold from Clock High
tCEH
0.5
-
0.5
-
0.5
-
ns
Data Hold from Clock High
tDH
0.5
-
0.5
-
0.5
-
ns
Write Hold from Clock High (WE, BWEX)
tWH
0.5
-
0.5
-
0.5
-
ns
Address Advance Hold from Clock High
tADVH
0.5
-
0.5
-
0.5
-
ns
Chip Select Hold from Clock High
tCSH
0.5
-
0.5
-
0.5
-
ns
ZZ High to Power Down
tPDS
2
-
2
-
2
-
cycle
ZZ Low to Power Up
tPUS
2
-
2
-
2
-
cycle
Output Load(B),
(for t
LZC
, t
LZOE
, t
HZOE
& t
HZC
)
Dout
353
/
1538
5pF*
+3.3V for 3.3V I/O
/+2.5V for 2.5V I/O
319
/
1667
Fig. 1
* Including Scope and Jig Capacitance
Output Load(A)
Dout
Zo=50
RL=50
VL=1.5V for 3.3V I/O
V
DDQ
/2 for 2.5V I/O
30pF*
相關(guān)PDF資料
PDF描述
K7N401801B Flash - NOR IC; NOR Flash Type:Page Mode Access; Memory Size:256MB; Memory Configuration:128K x 16; Access Time, Tacc:110ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:64-BGA; Supply Voltage Max:3.6V
K7N401801B-QC13 256 Megabit, 3.0 Volt-only Page Mode Flash Memory
K7N403601B 128Kx36 & 256Kx18 Pipelined NtRAM
K7N801849B-QC25 THERMISTOR, NTC; Series:B572; Thermistor type:NTC; Resistance:10R; Tolerance, resistance:20%; Beta value:2900; Temperature, lower limit, beta value:25(degree C); Temperature, upper limit, beta value:100(degree C); Case RoHS Compliant: Yes
K7N801801B 256Kx36 & 512Kx18-Bit Pipelined NtRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K7N403601B 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx36 & 256Kx18 Pipelined NtRAM
K7N403601B_06 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx36 & 256Kx18 Pipelined NtRAM
K7N403601B-QC13 制造商:Samsung Semiconductor 功能描述:
K7N403601B-QC13T00 制造商:Samsung Semiconductor 功能描述:
K7N403601B-QI13 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx36 & 256Kx18 Pipelined NtRAM
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