參數(shù)資料
型號(hào)： K7N403601A
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 128Kx36 & 256Kx18-Bit Pipelined NtRAMTM
中文描述： 128K × 36至
文件頁數(shù)： 9/17頁
文件大小： 387K
代理商： K7N403601A
K7N403601A
K7N401801A
128Kx36 & 256Kx18 Pipelined N
t
RAM
TM
- 9 -
Rev 1.0
May 2000
DC ELECTRICAL CHARACTERISTICS
(V
DD
=3.3V+0.165V/-0.165V, T
A
=0
°
C to +70
°
C)
PARAMETER
SYMBOL
Input Leakage Current(except ZZ)
I
IL
V
DD
=Max ; V
IN
=V
SS
to V
DD
Output Leakage Current
I
OL
Output Disabled,
Notes :
1. Reference AC Operating Conditions and Characteristics for input and timing.
2. Data states are all zero.
3. In Case of I/O Pins, the Max. V
IH
=V
DDQ
+0.3V
TEST CONDITIONS
MIN
MAX
UNIT
μ
A
μ
A
NOTES
-2
-2
-
-
-
-
-
-
+2
+2
400
390
360
140
130
130
Operating Current
I
CC
V
DD
=Max I
OUT
=0mA
Cycle Time
≥
t
CYC
Min
-16
-15
-13
-16
-15
-13
mA
1,2
Standby Current
I
SB
Device deselected, I
OUT
=0mA,
ZZ
≤
V
IL
, f=Max,
All Inputs
≤
0.2V or
≥
V
DD
-0.2V
mA
I
SB1
Device deselected, I
OUT
=0mA, ZZ
≤
0.2V, f=0,
All Inputs=fixed (V
DD
-0.2V or 0.2V)
Device deselected, I
OUT
=0mA, ZZ
≥
V
DD
-0.2V,
f=Max, All Inputs
≤
V
IL
or
≥
V
IH
I
OL
=8.0mA
I
OH
=-4.0mA
I
OL
=1.0mA
I
OH
=-1.0mA
-
100
mA
I
SB2
-
50
mA
Output Low Voltage(3.3V I/O)
Output High Voltage(3.3V I/O)
Output Low Voltage(2.5V I/O)
Output High Voltage(2.5V I/O)
Input Low Voltage(3.3V I/O)
Input High Voltage(3.3V I/O)
Input Low Voltage(2.5V I/O)
Input High Voltage(2.5V I/O)
V
OL
V
OH
V
OL
V
OH
V
IL
V
IH
V
IL
V
IH
-
0.4
-
0.4
-
0.8
V
V
V
V
V
V
V
V
2.4
-
2.0
-0.3*
2.0
-0.3*
1.7
V
DD
+0.5**
0.7
V
DD
+0.5**
3
3
V
SS
V
IH
V
SS-
1.0V
20% t
CYC
(MIN)
(V
DD
=3.3V+0.165V/-0.165V,V
DDQ
=3.3V+0.165/-0.165V or V
DD
=3.3V+0.165V/-0.165V,V
DDQ
=2.5V+0.4V/-0.125V, T
A
=0to70
°
C)
PARAMETER
TEST CONDITIONS
VALUE
Input Pulse Level(for 3.3V I/O)
0 to 3.0V
Input Pulse Level(for 2.5V I/O)
0 to 2.5V
Input Rise and Fall Time(Measured at 20% to 80% for 3.3V I/O)
1.0V/ns
Input Rise and Fall Time(Measured at 20% to 80% for 2.5V I/O)
1.0V/ns
Input and Output Timing Reference Levels for 3.3V I/O
1.5V
Input and Output Timing Reference Levels for 2.5V I/O
V
DDQ
/2
Output Load
See Fig. 1
相關(guān)PDF資料
PDF描述
K7N401801B Flash - NOR IC; NOR Flash Type:Page Mode Access; Memory Size:256MB; Memory Configuration:128K x 16; Access Time, Tacc:110ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:64-BGA; Supply Voltage Max:3.6V
K7N401801B-QC13 256 Megabit, 3.0 Volt-only Page Mode Flash Memory
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K7N801801B 256Kx36 & 512Kx18-Bit Pipelined NtRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K7N403601B 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx36 & 256Kx18 Pipelined NtRAM
K7N403601B_06 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx36 & 256Kx18 Pipelined NtRAM
K7N403601B-QC13 制造商:Samsung Semiconductor 功能描述:
K7N403601B-QC13T00 制造商:Samsung Semiconductor 功能描述:
K7N403601B-QI13 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx36 & 256Kx18 Pipelined NtRAM
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