參數(shù)資料
型號(hào)： K7N801849B-QC25
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
元件分類(lèi)： 熱敏電阻
英文描述： THERMISTOR, NTC; Series:B572; Thermistor type:NTC; Resistance:10R; Tolerance, resistance:20%; Beta value:2900; Temperature, lower limit, beta value:25(degree C); Temperature, upper limit, beta value:100(degree C); Case RoHS Compliant: Yes
中文描述： 256Kx36
文件頁(yè)數(shù)： 10/18頁(yè)
文件大?。?/td> 378K
代理商： K7N801849B-QC25
256Kx36 & 512Kx18 Pipelined N
t
RAM
TM
- 10 -
Rev 3.0
Nov. 2003
K7N803601B
K7N801801B
DC ELECTRICAL CHARACTERISTICS
(V
DD
=3.3V+0.165V/-0.165V, T
A
=0
°
C to +70
°
C)
Notes :
1. The above parameters are also guaranteed at industrial temperature range.
2. Reference AC Operating Conditions and Characteristics for input and timing.
3. Data states are all zero.
4. In Case of I/O Pins, the Max. V
IH
=V
DDQ
+0.3V
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
UNIT NOTES
Input Leakage Current(except ZZ)
I
IL
V
DD
=Max ; V
IN
=V
SS
to V
DD
-2
+2
μ
A
Output Leakage Current
I
OL
Output Disabled, V
out
=V
SS
to V
DDQ
-2
+2
μ
A
Operating Current
I
CC
Device Selected , I
OUT
=0mA,
ZZ
≤
V
IL ,
Cycle Time
≥
t
CYC
Min
-16
-
350
mA
1,2
-13
-
300
Standby Current
I
SB
Device deselected, I
OUT
=0mA, ZZ
≤
V
IL
,
f=Max, All Inputs
≤
0.2V or
≥
V
DD
-0.2V
-16
-
130
mA
-13
-
120
I
SB1
Device deselected, I
OUT
=0mA, ZZ
≤
0.2V, f=0
,
All Inputs=fixed (V
DD
-0.2V or 0.2V)
-
100
mA
I
SB2
Device deselected, I
OUT
=0mA, ZZ
≥
V
DD
-0.2V,
f=Max, All Inputs
≤
V
IL
or
≥
V
IH
-
60
mA
Output Low Voltage(3.3V I/O)
V
OL
I
OL
=8.0mA
-
0.4
V
Output High Voltage(3.3V I/O)
V
OH
I
OH
=-4.0mA
2.4
-
V
Output Low Voltage(2.5V I/O)
V
OL
I
OL
=1.0mA
-
0.4
V
Output High Voltage(2.5V I/O)
V
OH
I
OH
=-1.0mA
2.0
-
V
Input Low Voltage(3.3V I/O)
V
IL
-0.3*
0.8
V
Input High Voltage(3.3V I/O)
V
IH
2.0
V
DD
+0.3**
V
3
Input Low Voltage(2.5V I/O)
V
IL
-0.3*
0.7
V
Input High Voltage(2.5V I/O)
V
IH
1.7
V
DD
+0.3**
V
3
(V
DD
=3.3V+0.165V/-0.165V,V
DDQ
=3.3V+0.165/-0.165V or V
DD
=3.3V+0.165V/-0.165V,V
DDQ
=2.5V+0.4V/-0.125V, T
A
=0to70
°
C)
Parameter
TEST CONDITIONS
* The above parameters are also guaranteed at industrial temperature range.
Value
Input Pulse Level(for 3.3V I/O)
0 to 3.0V
Input Pulse Level(for 2.5V I/O)
0 to 2.5V
Input Rise and Fall Time(Measured at 20% to 80% for 3.3V I/O)
1.0V/ns
Input Rise and Fall Time(Measured at 20% to 80% for 2.5V I/O)
1.0V/ns
Input and Output Timing Reference Levels for 3.3V I/O
1.5V
Input and Output Timing Reference Levels for 2.5V I/O
V
DDQ
/2
Output Load
See Fig. 1
V
SS
V
IH
V
SS-
1.0V
20% t
CYC
(MIN)
相關(guān)PDF資料
PDF描述
K7N801801B 256Kx36 & 512Kx18-Bit Pipelined NtRAM
K7N803601B 256Kx36 & 512Kx18-Bit Pipelined NtRAM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K7N803601B 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256Kx36 & 512Kx18-Bit Pipelined NtRAM
K7N803601B-QC13 制造商:Samsung Semiconductor 功能描述:
K7N803601B-QC16 制造商:Samsung Semiconductor 功能描述:
K7N803601B-QC16/13 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256Kx36 & 512Kx18-Bit Flow Through NtRAM
K7N803609B 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256Kx36 & 512Kx18 Pipelined NtRAM
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