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參數(shù)資料
| 型號(hào)： | K7N801849B-QC25 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 元件分類： | 熱敏電阻 |
| 英文描述： | THERMISTOR, NTC; Series:B572; Thermistor type:NTC; Resistance:10R; Tolerance, resistance:20%; Beta value:2900; Temperature, lower limit, beta value:25(degree C); Temperature, upper limit, beta value:100(degree C); Case RoHS Compliant: Yes |
| 中文描述： | 256Kx36 |
| 文件頁(yè)數(shù)： | 5/18頁(yè) |
| 文件大?。?/td> | 378K |
| 代理商： | K7N801849B-QC25 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)當(dāng)前第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)
256Kx36 & 512Kx18 Pipelined N
t
RAM
TM
- 5 -
Rev 3.0
Nov. 2003
K7N803601B
K7N801801B
PIN CONFIGURATION
(TOP VIEW)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
100 Pin TQFP
(20mm x 14mm)
N.C.
N.C.
N.C.
V
DDQ
V
SSQ
N.C.
N.C.
DQb
8
DQb
7
V
SSQ
V
DDQ
DQb
6
DQb
5
V
DD
V
DD
V
DD
V
SS
DQb
4
DQb
3
V
DDQ
V
SSQ
DQb
2
DQb
1
DQb
0
N.C.
V
SSQ
V
DDQ
N.C.
N.C.
N.C.
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
A
10
N.C.
N.C.
V
DDQ
V
SSQ
N.C.
DQa
0
DQa
1
DQa
2
V
SSQ
V
DDQ
DQa
3
DQa
4
V
SS
V
DD
V
DD
ZZ
DQa
5
DQa
6
V
DDQ
V
SSQ
DQa
7
DQa
8
N.C.
N.C.
V
SSQ
V
DDQ
N.C.
N.C.
N.C.
1
9
9
9
9
9
9
9
9
9
9
8
8
8
8
8
8
8
8
A
6
A
7
C
1
C
2
B
B
C
2
V
D
V
S
C
W
C
O
A
N
A
1
A
8
8
A
9
5
4
4
4
4
4
4
4
4
4
4
3
3
3
3
3
3
3
3
A
1
A
1
A
1
A
1
A
1
A
1
A
1
N
N
V
D
V
S
N
N
A
0
A
1
A
2
A
3
A
4
A
5
3
L
K7N801801B(512Kx18)
N
N
PIN NAME
Notes :
1. The pin 84 is reserved for address bit for the 16Mb NtRAM.
2. A
0
and A
1
are the two least significant bits(LSB) of the address field and set the internal burst counter if burst is desired.
SYMBOL
PIN NAME
TQFP PIN NO.
SYMBOL
PIN NAME
TQFP PIN NO.
A
0
- A
18
ADV
WE
CLK
CKE
CS
1
CS
2
CS
2
BWx(x=a,b)
OE
ZZ
LBO
Address Inputs
Address Advance/Load
Read/Write Control Input
Clock
Clock Enable
Chip Select
Chip Select
Chip Select
Byte Write Inputs
Output Enable
Power Sleep Mode
Burst Mode Control
32,33,34,35,36,37,44
45,46,47,48,49,50,80
81,82,83,99,100
85
88
89
87
98
97
92
93,94
86
64
31
V
DD
V
SS
N.C.
DQa
0
~a
8
DQb
0
~b
8
V
DDQ
V
SSQ
Power Supply(+3.3V)
Ground
No Connect
Data Inputs/Outputs
Output Power Supply
(3.3V or 2.5V)
Output Ground
14,15,16,41,65,66,91
17,40,67,90
1,2,3,6,7,25,28,29,30,
38,39,42,43,51,52,53,
56,57,75,78,79,84,95,96
58,59,62,63,68,69,72,73,74
8,9,12,13,18,19,22,23,24
4,11,20,27,54,61,70,77
5,10,21,26,55,60,71,76
相關(guān)PDF資料 |
PDF描述 |
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| K7N801801B | 256Kx36 & 512Kx18-Bit Pipelined NtRAM |
| K7N803601B | 256Kx36 & 512Kx18-Bit Pipelined NtRAM |
| K7M801825B-QC75 | 256Kx36 & 512Kx18-Bit Pipelined NtRAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K7N803601B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx36 & 512Kx18-Bit Pipelined NtRAM |
| K7N803601B-QC13 | 制造商:Samsung Semiconductor 功能描述: |
| K7N803601B-QC16 | 制造商:Samsung Semiconductor 功能描述: |
| K7N803601B-QC16/13 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx36 & 512Kx18-Bit Flow Through NtRAM |
| K7N803609B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx36 & 512Kx18 Pipelined NtRAM |
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