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參數(shù)資料
| 型號(hào)： | K9D1G08V0M |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 64MB & 128MB SmartMediaTM Card |
| 中文描述： | 64MB的 |
| 文件頁數(shù)： | 27/37頁 |
| 文件大小： | 657K |
| 代理商： | K9D1G08V0M |
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SmartMedia
TM
27
K9S1208V0M/A-SSB0
K9D1G08V0M/A-SSB0
Device Operation
PAGE READ
Upon initial device power up, the device defaults to Read1 mode. This operation is also initiated by writing 00h to the command regis-
ter along with four address cycles. Once the command is latched, it does not need to be written for the following page read operation.
Three types of operations are available : random read, sequential read and sequential row read.
The random read mode is enabled when the page address is changed. The 528 bytes of data within the selected page are transferred
to the data registers in less than 12
μ
s(t
R
). The system controller can detect the completion of this data transfer(tR) by analyzing the
output of R/B pin. Once the data in a page is loaded into the registers, they may be read out in 50ns cycle time by pulsing RE sequen-
tially. High to low transitions of the RE clock output the data starting from the selected column address up to the last column address.
After the data of last column address is clocked out, the next page is automatically selected for sequential row read.
Waiting 12
μ
s again allows reading the selected page. The sequential row read operation is terminated by bringing CE high. The way
the Read1 and Read2 commands work is like a pointer set to either the main area or the spare area. The spare area of bytes 512 to
527 may be selectively accessed by writing the Read2 command. Addresses A
0
to A
3
set the starting address of the spare area while
addresses A
4
to A
7
are ignored. Unless the operation is aborted, the page address is automatically incremented for sequential row
read as in Read1 operation and spare sixteen bytes of each page may be sequentially read. The Read1 command(00h/01h) is
needed to move the pointer back to the main area. Figures 9 to 12 show typical sequence and timings for each read operation.
Figure 9. Read1 Operation
Start Add.(4Cycle)
00h
A
0
~ A
7
& A
9
~ A
26
Data Output(Serial Access)
(00h Command)
Data Field
Spare Field
CE
CLE
ALE
R/B
WE
I/O
0
~
7
RE
t
R
* After data access on 2nd half array by 01h command, the start pointer is automatically moved to 1st half
array (00h) at next cycle.
(01h Command)*
Data Field
Spare Field
1st half array
2st half array
1st half array
2st half array
A
25
: K9S1208V0X
A
26
: K9D1G08V0X
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9S6408V0A-SSB0 | 8M x 8 Bit SmartMediaTM Card |
| KA-3020 | 3x2mm SINGLE COLOR SURFACE MOUNT LED LAMPS |
| KA-3020EC | 3x2mm SINGLE COLOR SURFACE MOUNT LED LAMPS |
| KA-3020IT | 3x2mm SINGLE COLOR SURFACE MOUNT LED LAMPS |
| KA-3020SGC | 3x2mm SINGLE COLOR SURFACE MOUNT LED LAMPS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9D1G08V0M/A-SSB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64MB & 128MB SmartMediaTM Card |
| K9E2G08B0M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bits NAND Flash Memory |
| K9E2G08B0M-F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bits NAND Flash Memory |
| K9E2G08B0M-FCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bits NAND Flash Memory |
| K9E2G08B0M-FIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bits NAND Flash Memory |
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