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參數(shù)資料
| 型號： | K9E2G08U0M-P |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256M x 8 Bits NAND Flash Memory |
| 中文描述： | 256M x 8位NAND閃存 |
| 文件頁數(shù)： | 2/38頁 |
| 文件大?。?/td> | 888K |
| 代理商： | K9E2G08U0M-P |
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FLASH MEMORY
2
K9E2G08U0M
Preliminary
GENERAL DESCRIPTION
Offered in 256Mx8bits, the K9E2G08U0M is 2Gbit with spare 64Mbit capacity. The device is offered in 3.3V Vcc. Its NAND cell pro-
vides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200
μ
s
on the 528-bytes and an erase operation can be performed in typical 2ms on a 16K-bytes block. Data in the page can be read out at
50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip
write control automates all program and erase functions including pulse repetition, where required, and internal verification and mar-
gining of data. Even the write-intensive systems can take advantage of the K9E2G08U0M
′
s extended reliability of 100K program/
erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm.
The K9E2G08U0M is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable
applications requiring non-volatility.
FEATURES
Voltage Supply : 2.7V ~ 3.6V
Organization
- Memory Cell Array : (256M + 8,192K)bits x 8bits
- Data Register : (512 + 16)bits x 8bits
Automatic Program and Erase
- Page Program : (512 + 16)bits x 8bits
- Block Erase : (16K + 512)Bytes
Page Read Operation
- Page Size : (512 + 16)Bytes
- Random Access : 15
μ
s(Max.)
- Serial Page Access : 50ns(Min.)
Fast Write Cycle Time
- Program time : 200
μ
s(Typ.)
- Block Erase Time : 2ms(Typ.)
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
256M x 8 Bits NAND Flash Memory
Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
Command Register Operation
Intelligent Copy-Back
Unique ID for Copyright Protection
Package
- K9E2G08U0M-YCB0/YIB0
48 - Pin TSOP I (12 X 20 / 0.5 mm pitch)
- K9E2G08U0M-VCB0/VIB0
48 - Pin WSOP I (12 X 17 X 0.7mm)
- K9E2G08U0M-PCB0/PIB0
48 - Pin TSOP I (12 X 20 / 0.5 mm pitch)- Pb-free Package
- K9E2G08U0M-FCB0/FIB0
48 - Pin WSOP I (12 X 17 X 0.7mm)- Pb-free Package
* K9E2G08U0M-V,F(WSOPI ),
K9E2G08U0M-Y,P(TSOP1) is the same device as except
package type.
PRODUCT LIST
Part Number
Vcc Range
Organization
PKG Type
K9E2G08U0M-Y,P
2.7V ~ 3.6V
X8
TSOP1
K9E2G08U0M-V,F
WSOP1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9F1208D0A | 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory |
| K9F1208D0A-P | TV 128C 128#22D PIN RECP |
| K9F1208D0A-Y | TV 128C 128#22D PIN RECP |
| K9F1216D0A | 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory |
| K9F1216D0A-P | 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9E2G08U0M-V | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bits NAND Flash Memory |
| K9E2G08U0M-Y | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bits NAND Flash Memory |
| K9F1208B0B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
| K9F1208B0C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bits NAND Flash Memory |
| K9F1208B0C-P | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
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