參數(shù)資料
型號(hào)： K9E2G08U0M
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 256M x 8 Bits NAND Flash Memory
中文描述： 256M x 8位NAND閃存
文件頁(yè)數(shù)： 35/38頁(yè)
文件大?。?/td> 888K
代理商： K9E2G08U0M
FLASH MEMORY
35
K9E2G08U0M
Preliminary
READ STATUS
The device contains a Status Register which may be read to find out whether program or erase operation is completed, and whether
the program or erase operation is completed successfully. After writing 70h command to the command register, a read cycle outputs
the content of the Status Register to the I/O pins on the falling edge of CE or RE, whichever occurs last. This two line control allows
the system to poll the progress of each device in multiple memory connections even when R/B pins are common-wired. RE or CE
does not need to be toggled for updated status. Refer to table 4 for specific Status Register definitions. The command register
remains in Status Read mode until further commands are issued to it. Therefore, if the status register is read during a random read
cycle, a read command(00h or 50h) should be given before sequential page read cycle.
For Read Status of Multi Plane Program/Erase, the Read Multi-Plane Status command(71h) should be used to find out whether
multi-plane program or erase operation is completed, and whether the program or erase operation is completed successfully. The
pass/fail status data must be checked only in the Ready condition after the completion of Multi-Plane program or erase operation.
Table4. Read Staus Register Definition
NOTE
:
1. I/O 0 describes combined Pass/Fail condition for all planes. If any of the selected multiple pages/blocks fails in Program/
Erase operation, it sets "Fail" flag.
2. The pass/fail status applies only to the corresponding plane.
I/O No.
Status
Definition by 70h Command
Definition by 71h Command
I/O 0
Total Pass/Fail
Pass : "0" Fail : "1"
Pass : "0"
(1)
Fail : "1"
I/O 1
Plane 0 Pass/Fail
Must be don’t -cared
Pass : "0"
(2)
Fail : "1"
I/O 2
Plane 1 Pass/Fail
Must be don’t -cared
Pass : "0"
(2)
Fail : "1"
I/O 3
Plane 2 Pass/Fail
Must be don’t -cared
Pass : "0"
(2)
Fail : "1"
I/O 4
Plane 3 Pass/Fail
Must be don’t -cared
Pass : "0"
(2)
Fail : "1"
I/O 5
Reserved
Must be don’t -cared
Must be don’t-cared
I/O 6
Device Operation
Busy : "0" Ready : "1"
Busy : "0" Ready : "1"
I/O 7
Write Protect
Protected : "0" Not Protected : "1"
Protected : "0" Not Protected : "1"
Read ID
The device has 2 types of Read ID command, i.e. Read ID (1) command 90h and Read ID (2) command 91h.
The device contains a product identification mode, initiated by writing 90h to the command register, followed by an address input of
00h. Four read cycles sequentially output the manufacture code(ECh), and the device code (79h), Reserved(A5h), Multi plane oper-
ation code(C0h) respectively. A5h must be don’t-cared. C0h means that device supports Multi Plane operation. The command regis-
ter remains in Read ID mode until further commands are issued to it.
Read ID (2) command 91h provides Multi-Plane(4-Plane) operations availability. If ID code read out by 91h is 20h, it indicates the
device has Multi-Plane(4-Plane) operations.
Figure 21-1 & 21-2 show the operation sequence.
Figure 21-1. Read ID (1) Operation
CE
CLE
I/O
0
~
7
ALE
RE
WE
90h
00h
ECh
Address. 1cycle
Maker code
Device code
t
CEA
t
AR
t
REA
A5h
C0h
Multi-Plane code
t
WHR
71h
相關(guān)PDF資料
PDF描述
K9E2G08U0M-V 256M x 8 Bits NAND Flash Memory
K9E2G08U0M-Y 256M x 8 Bits NAND Flash Memory
K9E2G08U0M-F 256M x 8 Bits NAND Flash Memory
K9E2G08U0M-P 256M x 8 Bits NAND Flash Memory
K9F1208D0A 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9E2G08U0M-F 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256M x 8 Bits NAND Flash Memory
K9E2G08U0M-P 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256M x 8 Bits NAND Flash Memory
K9E2G08U0M-V 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256M x 8 Bits NAND Flash Memory
K9E2G08U0M-Y 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:256M x 8 Bits NAND Flash Memory
K9F1208B0B 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:FLASH MEMORY
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