參數(shù)資料
型號(hào): K9F1208B0B
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 64M x 8 Bit NAND Flash Memory
中文描述: 6400 × 8位NAND閃存
文件頁(yè)數(shù): 41/45頁(yè)
文件大小: 1029K
代理商: K9F1208B0B
FLASH MEMORY
41
K9F1208B0B
K9F1208U0B
K9F1208R0B
Preliminary
Read ID
The device contains a product identification mode, initiated by writing 90h to the command register, followed by an address input of
00h. Four read cycles sequentially output the manufacture code(ECh), and the device code, Reserved(A5h), Multi plane operation
code(C0h) respectively. A5h must be don’t-cared. C0h means that device supports Multi Plane operation but must be don’t-cared for
1.8V device. The command register remains in Read ID mode until further commands are issued to it. Figure 21 shows the operation
sequence.
Figure 21. Read ID Operation 1
CE
CLE
I/O
0
~
7
ALE
RE
WE
90h
00h
ECh
Address. 1cycle
Maker code
Device code
t
CEA
t
AR
t
REA
Device
Code
A5h
C0h
Multi-Plane code
t
WHR
Device
Device Code
K9F1208R0B
36h
K9F1208B0B
76h
K9F1208U0B
76h
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參數(shù)描述
K9F1208B0C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bits NAND Flash Memory
K9F1208B0C-P 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
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K9F1208D0A-P 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
K9F1208D0A-Y 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit , 32M x 16 Bit NAND Flash Memory