參數(shù)資料
型號: K9F1208B0B
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 64M x 8 Bit NAND Flash Memory
中文描述: 6400 × 8位NAND閃存
文件頁數(shù): 43/45頁
文件大小: 1029K
代理商: K9F1208B0B
FLASH MEMORY
43
K9F1208B0B
K9F1208U0B
K9F1208R0B
Preliminary
READY/BUSY
The device has a R/B output that provides a hardware method of indicating the completion of a page program, erase and random
read . The R/B pin is normally high but transitions to low after program or erase command is written to the command register or ran-
dom read is started after address loading. It returns to high when the internal controller has finished the operation. The pin is an open-
drain driver thereby allowing two or more R/B outputs to be Or-tied. Because pull-up resistor value is related to tr(R/B) and current
drain during busy(ibusy) , an appropriate value can be obtained with the following reference chart(Fig 23). Its value can be deter-
mined by the following guidance.
V
CC
R/B
open drain output
Device
GND
Rp
Figure 23. Rp vs tr ,tf & Rp vs ibusy
ibusy
Busy
Ready Vcc
VOH
tf
tr
VOL
1.8V device - V
OL
: 0.1V, V
OH
: Vcc
Q
-0.1V
2.7V device - V
OL
: 0.4V, V
OH
: Vcc
Q
-0.4V
3.3V device - V
OL
: 0.4V, V
OH
: 2.4V
C
L
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