參數(shù)資料
型號(hào)： K9F1208D0A-P
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： TV 128C 128#22D PIN RECP
中文描述： 6400 × 8位，32 × 16位NAND閃存
文件頁(yè)數(shù)： 32/46頁(yè)
文件大?。?/td> 748K
代理商： K9F1208D0A-P
FLASH MEMORY
32
K9F1208D0A
K9F1208U0A
K9F1216D0A
K9F1216U0A
Device Operation
PAGE READ
Upon initial device power up, the device defaults to Read1 mode. This operation is also initiated by writing 00h to the command regis-
ter along with four address cycles. Once the command is latched, it does not need to be written for the following page read operation.
Three types of operations are available : random read, serial page read and sequential row read.
The random read mode is enabled when the page address is changed. The 528 bytes(x8 device) or 264words(x16 device)of data
within the selected page are transferred to the data registers in less than 12
μ
s(t
R
). The system controller can detect the completion of
this data transfer(tR) by analyzing the output of R/B pin. CE must be held low while in busy for K9F12XXU0A-YXB0 or K9F1208U0A-
VXB0, while CE is don’t-care with K9F12XXX0A-DXB0. If CE goes high before the device returns to Ready, the random read opera-
tion is interrupted and Busy returns to Ready as the defined by tCRY. Since the operation was aborted, the serial page read does not
output valid data. Once the data in a page is loaded into the registers, they may be read out in 50ns cycle time by sequentially pulsing
RE. High to low transitions of the RE clock output the data stating from the selected column address up to the last column address.
The way the Read1 and Read2 commands work is like a pointer set to either the main area or the spare area. The spare area of 512
to 527 bytes (x8 device) or 256 to 263 words(x16 device)may be selectively accessed by writing the Read2 command. Addresses A
0
to A
3
set the starting address of the spare area while addresses A
4
to A
7
are ignored. The Read1 command(00h/01h) is needed to
move the pointer back to the main area. Figures 7 to 10 show typical sequence and timings for each read operation.
Sequential Row Read is available only on
K9F1208U0A-Y,P,V,F or K9F1208D0A-Y,P
:
After the data of last column address is clocked out, the next page is automatically selected for sequential row read. Waiting 10
μ
s
again allows reading the selected page. The sequential row read operation is terminated by bringing CE high. Unless the operation
is aborted, the page address is automatically incremented for sequential row read as in Read1 operation and spare sixteen bytes of
each page may be sequentially read. The Sequential Read 1 and 2 operation is allowed only within a block and after the last page of
a block is readout, the sequential read operation must be terminated by bringing CE high. When the page address moves onto the
next block, read command and address must be given. Figures 9, 10 show typical sequence and timings for sequential row read
operation.
相關(guān)PDF資料
PDF描述
K9F1208D0A-Y TV 128C 128#22D PIN RECP
K9F1216D0A 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
K9F1216D0A-P 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
K9F1216D0A-Y 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
K9F1208X0A 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F1208D0A-Y 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
K9F1208D0B 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9F1208D0B-D 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9F1208D0B-Y 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit NAND Flash Memory
K9F1208Q0A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata
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