參數(shù)資料
型號: K9F1208D0A-Y
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: TV 128C 128#22D PIN RECP
中文描述: 6400 × 8位,32 × 16位NAND閃存
文件頁數(shù): 44/46頁
文件大?。?/td> 748K
代理商: K9F1208D0A-Y
FLASH MEMORY
44
K9F1208D0A
K9F1208U0A
K9F1216D0A
K9F1216U0A
READY/BUSY
The device has a R/B output that provides a hardware method of indicating the completion of a page program, erase and random
read completion. The R/B pin is normally high but transitions to low after program or erase command is written to the command regis-
ter or random read is started after address loading. It returns to high when the internal controller has finished the operation. The pin is
an open-drain driver thereby allowing two or more R/B outputs to be Or-tied. Because pull-up resistor value is related to tr(R/B) and
current drain during busy(ibusy) , an appropriate value can be obtained with the following reference chart(Fig 23). Its value can be
determined by the following guidance.
V
CC
R/B
open drain output
Device
GND
Rp
Figure 23. Rp vs tr ,tf & Rp vs ibusy
ibusy
Busy
Ready Vcc
VOH
tf
tr
VOL
3.3V device - V
OL
: 0.4V, V
OH
: 2.4V
C
L
2.65V device - V
OL
: 0.4V, V
OH
: Vcc
Q
-0.4V
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