參數(shù)資料
型號(hào): K9F1208U0B-D
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 64M x 8 Bit NAND Flash Memory
中文描述: 6400 × 8位NAND閃存
文件頁數(shù): 33/45頁
文件大?。?/td> 767K
代理商: K9F1208U0B-D
FLASH MEMORY
33
K9F1208U0B
K9F1208D0B
Advance
Figure 8. Read2 Operation
50h
Data Output(Sequential)
Spare Field
CE
CLE
ALE
R/B
WE
Start Add.(4Cycle)
I/O
X
RE
Figure 9. Sequential Row Read1 Operation
(only for K9F1208U0B-Y,P and K9F1208U0B-V,F valid within a block)
00h
01h
A
0
~ A
7
& A
9
~ A
25
I/O
X
R/B
Start Add.(4Cycle)
Data Output
Data Output
Data Output
1st
2nd
Nth
(528 Byte)
(528 Byte)
t
R
t
R
t
R
t
R
The Sequential Read 1 and 2 operation is allowed only within a block and after the last page of a block is read-
out, the sequential read operation must be terminated by bringing CE high. When the page address moves onto
the next block, read command and address must be given.
( 00h Command)
Data Field
Spare Field
( 01h Command)
Data Field
Spare Field
1st half array 2nd half array
1st
2nd
Nth
1st half array 2nd half array
1st
2nd
Nth
Block
On K9F1208U0B-Y,P or K9F1208U0B-V,F
CE must be held low during tR
Main array
Data Field
Spare Field
A
0
~ A
7
& A
9
~ A
25
相關(guān)PDF資料
PDF描述
K9F1208U0B-V 64M x 8 Bit NAND Flash Memory
K9F1208U0B-Y 64M x 8 Bit NAND Flash Memory
K9F1208U0B Aluminum Snap-In Capacitor; Capacitance: 1000uF; Voltage: 160V; Case Size: 25x40 mm; Packaging: Bulk
K9F1208Q0B 64M x 8 Bit NAND Flash Memory
K9F1208Q0B-D 64M x 8 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F1208U0B-JIB0000 制造商:Samsung Semiconductor 功能描述:512 SLC NORMAL X8 FBGA - Trays
K9F1208U0B-JIB0T00 制造商:Samsung Semiconductor 功能描述:512 SLC NORMAL X8 FBGA - Tape and Reel
K9F1208U0B-P 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
K9F1208U0B-PCB0000 制造商:Samsung Semiconductor 功能描述:512 SLC NORMAL X8 TSOP1 - Trays
K9F1208U0B-PCB0T00 制造商:Samsung Semiconductor 功能描述:FLASH PARALLEL 3V/3.3V 512MBIT 64MX8 15US 48TSOP-I - Tape and Reel