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參數(shù)資料
| 型號： | K9F1G08D0M |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 元件分類： | 圓形連接器 |
| 英文描述： | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV07; Number of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight |
| 中文描述： | 128M的× 8位/ 64米× 16位NAND閃存 |
| 文件頁數(shù)： | 31/40頁 |
| 文件大?。?/td> | 729K |
| 代理商： | K9F1G08D0M |
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FLASH MEMORY
31
K9F1G08D0M
K9F1G08U0M
K9F1G16Q0M
K9F1G16D0M
K9F1G16U0M
K9F1G08Q0M
Device Operation
PAGE READ
Upon initial device power up, the device defaults to Read mode. This operation is also initiated by writing 00h and 30h to the com-
mand register along with four address cycles. In two consecutive read operations, the second one doesn’t need 00h command, which
four address cycles and 30h command initiates that operation.Two types of operations are available : random read, serial page read
The random read mode is enabled when the page address is changed. The 2112 bytes(X8 device) or 1056 words(X16 device) of
data within the selected page are transferred to the data registers in less than 25
μ
s(t
R
). The system controller can detect the comple-
tion of this data transfer(tR) by analyzing the output of R/B pin. Once the data in a page is loaded into the data registers, they may be
read out in 50ns(1.8V device : 80ns) cycle time by sequentially pulsing RE. The repetitive high to low transitions of the RE clock make
the device output the data starting from the selected column address up to the last column address.
The device may output random data in a page instead of the consecutive sequential data by writing random data output command.
The column address of next data, which is going to be out, may be changed to the address which follows random data output com-
mand. Random data output can be operated multiple times regardless of how many times it is done in a page.
Figure 6. Read Operation
Address(4Cycle)
00h
Col Add1,2 & Row Add1,2
Data Output(Serial Access)
Data Field
Spare Field
CE
CLE
ALE
R/B
WE
RE
t
R
30h
I/Ox
相關PDF資料 |
PDF描述 |
|---|---|
| K9F1G16D0M | 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
| K9F1G08Q0M | 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
| K91G08Q0M | CONTACT |
| K9F1G16Q0M | 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
| K9F2808U0 | 16M x 8 Bit NAND Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K9F1G08Q0A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
| K9F1G08Q0M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
| K9F1G08Q0M-PCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata |
| K9F1G08Q0M-PIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata |
| K9F1G08Q0M-YCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata |
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