參數(shù)資料
型號： K9F1G08D0M
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
元件分類： 圓形連接器
英文描述： Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV07; Number of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight
中文描述： 128M的× 8位/ 64米× 16位NAND閃存
文件頁數(shù)： 33/40頁
文件大?。?/td> 729K
代理商： K9F1G08D0M
FLASH MEMORY
33
K9F1G08D0M
K9F1G08U0M
K9F1G16Q0M
K9F1G16D0M
K9F1G16U0M
K9F1G08Q0M
Cache Program
Cache Program is an extension of Page Program, which is executed with 2112byte(X8 device) or 1056word(X16 device) data regis-
ters, and is available only within a block. Since the device has 1 page of cache memory, serial data input may be executed while data
stored in data register are programmed into memory cell.
Figure 9. Random Data Input In a Page
80h
R/B
Address & Data Input
I/O
0
Pass
10h
70h
Fail
t
PROG
85h
Address & Data Input
After writing the first set of data up to 2112byte(X8 device) or 1056word(X16 device) into the selected cache registers, Cache Pro-
gram command (15h) instead of actual Page Program (10h) is inputted to make cache registers free and to start internal program
operation. To transfer data from cache registers to data registers, the device remains in Busy state for a short period of time(tCBSY)
and has its cache registers ready for the next data-input while the internal programming gets started with the data loaded into data
registers. Read Status command (70h) may be issued to find out when cache registers become ready by polling the Cache-Busy sta-
tus bit(I/O 6). Pass/fail status of only the previouse page is available upon the return to Ready state. When the next set of data is
inputted with the Cache Program command, tCBSY is affected by the progress of pending internal programming. The programming of
the cache registers is initiated only when the pending program cycle is finished and the data registers are available for the transfer of
data from cache registers. The status bit(I/O5) for internal Ready/Busy may be polled to identify the completion of internal program-
ming. If the system monitors the progress of programming only with R/B, the last page of the target programming sequence must be
progammed with actual Page Program command (10h).
Figure 10. Cache Program
(available only within a block)
t
CBSY
80h
R/B
80h
Address &
Data Input
15h
80h
Address &
Data Input
15h
80h
Address &
Data Input
10h
t
CBSY
t
CBSY
t
PROG
70h
Address &
Data Input*
15h
I/Ox
Col Add1,2 & Row Add1,2
Data
Col Add1,2
Data
Col Add1,2 & Row Add1,2
Data
Col Add1,2 & Row Add1,2
Data
Col Add1,2 & Row Add1,2
Data
Col Add1,2 & Row Add1,2
Data
"0"
"1"
相關(guān)PDF資料
PDF描述
K9F1G16D0M 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9F1G08Q0M 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K91G08Q0M CONTACT
K9F1G16Q0M 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9F2808U0 16M x 8 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F1G08Q0A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
K9F1G08Q0M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9F1G08Q0M-PCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G08Q0M-PIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G08Q0M-YCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
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