參數(shù)資料
型號(hào)： K9F1G16D0M
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
中文描述： 128M的× 8位/ 64米× 16位NAND閃存
文件頁(yè)數(shù)： 34/40頁(yè)
文件大?。?/td> 729K
代理商： K9F1G16D0M
FLASH MEMORY
34
K9F1G08D0M
K9F1G08U0M
K9F1G16Q0M
K9F1G16D0M
K9F1G16U0M
K9F1G08Q0M
Copy-Back Program
Figure 11. Page Copy-Back program Operation
00h
R/B
Add.(4Cycles)
I/O
0
Pass
85h
70h
Fail
t
PROG
Add.(4Cycles)
t
R
Source Address
Destination Address
The copy-back program is configured to quickly and efficiently rewrite data stored in one page without utilizing an external memory.
Since the time-consuming cycles of serial access and re-loading cycles are removed, the system performance is improved. The ben-
efit is especially obvious when a portion of a block is updated and the rest of the block also need to be copied to the newly assigned
free block. The operation for performing a copy-back program is a sequential execution of page-read without serial access and copy-
ing-program with the address of destination page. A read operation with "35h" command and the address of the source page moves
the whole 2112byte(X8 device) or 1056word(X16 device) data into the internal data buffer. As soon as the device returns to Ready
state, Page-Copy Data-input command (85h) with the address cycles of destination page followed may be written. The Program
Confirm command (10h) is required to actually begin the programming operation. Data input cycle for modifying a portion or multiple
distant portions of the source page is allowed as shown in Figure 12.
"When there is a program-failure at Copy-Back operation,
error is reported by pass/fail status. But if the soure page has a bit error for charge loss, accumulated copy-back
operations could also accumulate bit errors. For this reason, two bit ECC is recommended for copy-back operation."
35h
NOTE
: Since programming the last page does not employ caching, the program time has to be that of Page Program. However, if
the previous program cycle with the cache data has not finished, the actual program cycle of the last page is initiated only after com-
pletion of the previous cycle, which can be expressed as the following formula.
tPROG= Program time for the last page+ Program time for the ( last -1 )th page
- (Program command cycle time + Last page data loading time)
10h
Figure 12. Page Copy-Back program Operation with Random Data Input
00h
R/B
Add.(4Cycles)
85h
70h
t
PROG
Add.(4Cycles)
t
R
Source Address
Destination Address
Data
35h
10h
85h
Data
Add.(2Cycles)
There is no limitation for the number of repetition.
I/Ox
I/Ox
Col. Add1,2 & Row Add1,2
Col. Add1,2 & Row Add1,2
Col. Add1,2 & Row Add1,2
Col. Add1,2 & Row Add1,2
Col Add1,2
相關(guān)PDF資料
PDF描述
K9F1G08Q0M 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K91G08Q0M CONTACT
K9F1G16Q0M 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9F2808U0 16M x 8 Bit NAND Flash Memory
K9F2808U0A 16M x 8 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F1G16Q0M 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9F1G16Q0M-PCB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G16Q0M-PIB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G16Q0M-YCB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G16Q0M-YIB0 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
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