參數(shù)資料
型號： K9F1G16U0M
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
中文描述： 128M的× 8位/ 64米× 16位NAND閃存
文件頁數(shù)： 11/40頁
文件大?。?/td> 729K
代理商： K9F1G16U0M
FLASH MEMORY
11
K9F1G08D0M
K9F1G08U0M
K9F1G16Q0M
K9F1G16D0M
K9F1G16U0M
K9F1G08Q0M
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions otherwise noted.)
NOTE
: V
IL
can undershoot to -0.4V and V
IH
can overshoot to V
CC
+0.4V for durations of 20 ns or less.
Parameter
Symbol
Test Conditions
K9F1GXXX0M
Unit
1.8V
2.65V
3.3V
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Operating
Current
Page Read with
Serial Access
I
CC
1
tRC=50ns, CE=V
IL
I
OUT
=0mA
-
8
15
-
10
20
-
10
20
mA
Program
I
CC
2
-
-
8
15
-
10
20
-
10
20
Erase
I
CC
3
-
-
8
15
-
10
20
-
10
20
Stand-by Current(TTL)
I
SB
1
CE=V
IH
, WP=PRE=0V/V
CC
-
-
1
-
-
1
-
-
1
Stand-by Current(CMOS)
I
SB
2
CE=V
CC
-0.2,
WP=PRE=0V/V
CC
-
10
50
-
10
50
-
10
50
μ
A
Input Leakage Current
I
LI
V
IN
=0 to Vcc(max)
-
-
±
10
-
-
±
10
-
-
±
10
Output Leakage Current
I
LO
V
OUT
=0 to Vcc(max)
-
-
±
10
-
-
±
10
-
-
±
10
Input High Voltage
V
IH*
-
V
CC
-0.4
-
V
CC
+0.3
V
CC
-0.4
-
V
CC
+0.3
2.0
-
V
CC
+0.3
V
Input Low Voltage, All inputs
V
IL*
-
-0.3
-
0.4
-0.3
-
0.5
-0.3
-
0.8
Output High Voltage Level
V
OH
K9F1GXXQ0M :I
OH
=-100
μ
A
K9F1GXXD0M :I
OH
=-100
μ
A
K9F1GXXU0M :I
OH
=-400
μ
A
Vcc
-0.1
-
-
V
CCQ
-0.4
-
-
2.4
-
-
Output Low Voltage Level
V
OL
K9F1GXXQ0M :I
OL
=100uA
K9F1GXXD0M :I
OL
=100
μ
A
K9F1GXXU0M :I
OL
=2.1mA
-
-
0.1
-
-
0.4
-
-
0.4
Output Low Current(R/B)
I
OL
(R/B)
K9F1GXXQ0M :V
OL
=0.1V
K9F1GXXD0M :V
OL
=0.1V
K9F1GXXU0M :V
OL
=0.4V
3
4
-
3
4
-
8
10
-
mA
相關(guān)PDF資料
PDF描述
K9F1G08D0M Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV07; Number of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight
K9F1G16D0M 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9F1G08Q0M 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K91G08Q0M CONTACT
K9F1G16Q0M 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
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K9F1G16U0M-PIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G16U0M-YCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G16U0M-YIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
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