參數(shù)資料
型號: K9F1G16U0M
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
中文描述: 128M的× 8位/ 64米× 16位NAND閃存
文件頁數(shù): 30/40頁
文件大?。?/td> 729K
代理商: K9F1G16U0M
FLASH MEMORY
30
K9F1G08D0M
K9F1G08U0M
K9F1G16Q0M
K9F1G16D0M
K9F1G16U0M
K9F1G08Q0M
4th ID Data
ITEM
Description
I/O7
I/O6
I/O5 I/O4
I/O3
I/O2
I/O1 I/O0
Page Size
(w/o redundant area )
1KB
2KB
Reserved
Reserved
0 0
0 1
1 0
1 1
Blcok Size
(w/o redundant area )
64KB
128KB
256KB
Reserved
0 0
0 1
1 0
1 1
Redundant Area Size
( byte/512byte)
8
16
0
1
Organization
x8
x16
0
1
Serial Access minimum
50ns
25ns
Reserved
Reserved
0
1
0
1
0
0
1
1
相關(guān)PDF資料
PDF描述
K9F1G08D0M Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV07; Number of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight
K9F1G16D0M 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9F1G08Q0M 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K91G08Q0M CONTACT
K9F1G16Q0M 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9F1G16U0M-PCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G16U0M-PIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G16U0M-YCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G16U0M-YIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb Gb 1.8V NAND Flash Errata
K9F1G8U0C-PIB0T00 制造商:Samsung Semiconductor 功能描述:512 SLC NORMAL X8 FBGA - Trays