參數(shù)資料
型號: K9F5608U0A-YIB0
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: TV 79C 79#22D PIN RECP
中文描述: 32M的× 8位NAND閃存
文件頁數(shù): 11/29頁
文件大?。?/td> 610K
代理商: K9F5608U0A-YIB0
K9F5608U0A-YCB0,K9F5608U0A-YIB0
FLASH MEMORY
11
Erase Flow Chart
Start
I/O 6 = 1
or R/B = 1
I/O 0 = 0
No
*
Write 60h
Write Block Address
Write D0h
Read Status Register
Erase Error
Yes
No
: If erase operation results in an error, map out
the failing block and replace it with another block.
*
Erase Completed
Yes
Read Flow Chart
Start
Verify ECC
No
Write 00h
Write Address
Read Data
ECC Generation
Reclaim the Error
Page Read Completed
Yes
NAND Flash Technical Notes
(Continued)
Block Replacement
* Step1
When an error happens in the nth page of the Block ’A’ during erase or program operation.
* Step2
Copy the nth page data of the Block ’A’ in the buffer memory to the nth page of another free block. (Block ’B’)
* Step3
Then, copy the data in the 1st ~ (n-1)th page to the same location of the Block ’B’.
* Step4
Do not erase or program to Block ’A’ by creating an ’invalid Block’ table or other appropriate scheme.
Buffer memory of the controller.
1st
Block A
Block B
(n-1)th
nth
(page)
1
2
{
1st
(n-1)th
nth
(page)
{
an error occurs.
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相關代理商/技術參數(shù)
參數(shù)描述
K9F5608U0B 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5608U0B-DCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5608U0B-DIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5608U0B-FCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5608U0B-FIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory