參數(shù)資料
型號(hào): K9F5608U0A-YIB0
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: TV 79C 79#22D PIN RECP
中文描述: 32M的× 8位NAND閃存
文件頁(yè)數(shù): 22/29頁(yè)
文件大小: 610K
代理商: K9F5608U0A-YIB0
K9F5608U0A-YCB0,K9F5608U0A-YIB0
FLASH MEMORY
22
Figure 4. Read2 Operation
50h
Data Output(Sequential)
Spare Field
CE
CLE
ALE
R/B
WE
Start Add.(3Cycle)
I/O
0
~
7
RE
Figure 5. Sequential Row Read1 Operation
00h
01h
A
0
~ A
7
& A
9
~ A
24
I/O
0
~
7
R/B
Start Add.(3Cycle)
Data Output
Data Output
Data Output
1st
2nd
Nth
(528 Byte)
(528 Byte)
t
R
t
R
t
R
t
R
A
0
~ A
3
& A
9
~ A
24
(A
4
~ A
7
:
Don't Care)
1st half array 2nd half array
Data Field
Spare Field
The Sequential Read 1 and 2 operation is allowed only within a block and after the last page of a block is read-
out, the sequential read operation must be terminated by bringing CE high. When the page address moves onto
the next block, read command and address must be given.
(GND input=L, 00h Command)
Data Field
Spare Field
(GND input=L, 01h Command)
Data Field
Spare Field
(GND input=H, 00h Command)
Data Field
Spare Field
1st half array 2nd half array
1st
2nd
Nth
1st half array 2nd half array
1st
2nd
Nth
Block
1st half array 2nd half array
1st
2nd
Nth
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參數(shù)描述
K9F5608U0B 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5608U0B-DCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5608U0B-DIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5608U0B-FCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5608U0B-FIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit , 16M x 16 Bit NAND Flash Memory