參數(shù)資料
          

          


          


          
型號(hào)：
K9F5608U0C-P

          

          
廠商：
SAMSUNG SEMICONDUCTOR CO. LTD.

          

          
英文描述：
512Mb/256Mb 1.8V NAND Flash Errata

          

          
中文描述：
512Mb/256Mb 1.8 NAND閃存勘誤表

          

          
文件頁(yè)數(shù)：
7/39頁(yè)

          

          
文件大小：
655K

          

          
代理商：
K9F5608U0C-P


          

          

          

	
          
    
    

    
          
	
          K9F5616U0C-YCB0,YIB0,PCB0,PIB0
          K9F5616U0C-DCB0,DIB0,HCB0,HIB0
          FLASH MEMORY
          6
          K9F5608U0C-YCB0,YIB0,PCB0,PIB0
          K9F5608U0C-DCB0,DIB0,HCB0,HIB0
          K9F5608Q0C-DCB0,DIB0,HCB0,HIB0
          K9F5616Q0C-DCB0,DIB0,HCB0,HIB0
          K9F5608U0C-VCB0,VIB0,FCB0,FIB0
          PIN DESCRIPTION
          Pin NAME
          Pin Function
          I/O
          0
           ~ I/O
          7
          (K9F5608X0C)
          I/O
          0
           ~ I/O
          15
          (K9F5616X0C)
          DATA INPUTS/OUTPUTS  
          The I/O pins are used to input command, address and data, and to output data during read operations. The 
          I/O pins float to high-z when the chip is deselected or when the outputs are disabled.  
          I/O8 ~ I/O15 are used only in X16 organization device.  Since command input and address input are x8 oper-
          ation, I/O8 ~ I/O15 are not used to input command & address. I/O8 ~ I/O15 are used only for data input and 
          output.
          CLE
          COMMAND LATCH ENABLE
          The CLE input controls the activating path for commands sent to the command register. When active high, 
          commands are latched into the command register through the I/O ports on the rising edge of the WE signal.
          ALE
          ADDRESS LATCH ENABLE
          The ALE input controls the activating path for address to the internal address registers. Addresses are 
          latched on the rising edge of WE with ALE high.
          CE
          CHIP ENABLE
          The CE input is the device selection control. When the device is in the Busy state,  CE high is ignored, and 
          the device does not return to standby mode in program or erase opertion. Regarding  CE control during read 
          operation, refer to ’Page read’ section of Device operation . 
          RE
          READ ENABLE
          The RE input is the serial data-out control, and when active drives the data onto the I/O bus. Data is valid 
          tREA after the falling edge of RE which also increments the internal column address counter by one.
          WE
          WRITE ENABLE
          The WE input controls writes to the I/O port. Commands, address and data are latched on the rising edge of 
          the WE pulse.
          WP
          WRITE PROTECT
          The WP pin provides inadvertent write/erase protection during power tra nsitions. The internal high voltage 
          generator is reset when the WP pin is active low.  When LOCKPRE is a logic high and WP is a logic low, the 
          all blocks go to lock state.
          R/B
          READY/BUSY OUTPUT
          The R/B output indicates the status of the device operation. When low, it indicates that a program, erase or 
          random read operation is in process and returns to high state upon completion. It is an open drain output and 
          does not float to high-z condition when the chip is deselected or when outputs are disabled.
          VccQ
          OUTPUT BUFFER POWER
          V
          CC
          Q is the power supply for  Output Buffer. 
          VccQ is internally connected to Vcc, thus should be biased to Vcc.
          Vcc
          POWER
          V
          CC
           is the power supply for device.  
          Vss
          GROUND
          N.C
          NO CONNECTION
          Lead is not internally connected.
          DNU
          DO NOT USE
          Leave it disconnected
          LOCKPRE
          LOCK MECHANISM & POWER-ON AUTO-READ ENABLE
          To Enable and disable the Lock mechanism and Power On Auto Read.  When LOCKPRE is a logic high, 
          Block Lock mode and Power-On Auto-Read mode are enabled, and when LOCKPRE is a logic low, Block 
          Lock mode and Power-On Auto-Read mode are disabled. Power-On Auto-Read mode is available only on 
          3.3V device(K9F56XXU0C)
          Don’t leave it N.C
          . 
          Not using
          LOCK MECHANISM & POWER-ON AUTO-READ, connect it Vss.
          NOTE
           : Connect all V
          CC
           and V
          SS
           pins of each device to common power supply outputs.
                     Do not leave V
          CC
           or V
          SS
           disconnected.
          
    
          
    
    
          


          


          

          相關(guān)PDF資料
          		

          PDF描述
          		

          
          

          
K9F5608U0C-V
512Mb/256Mb 1.8V NAND Flash Errata

          

          
K9F5608U0C-Y
512Mb/256Mb 1.8V NAND Flash Errata

          

          
K9F5616Q0C
512Mb/256Mb 1.8V NAND Flash Errata

          

          
K9F5616Q0C-D
512Mb/256Mb 1.8V NAND Flash Errata

          

          
K9F5616Q0C-H
512Mb/256Mb 1.8V NAND Flash Errata

          

          

          

          


          


          

          相關(guān)代理商/技術(shù)參數(shù)
          		

          參數(shù)描述
          		

          
          

          
K9F5608U0C-PCB0
 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata

          

          
K9F5608U0C-PCB0T00
 制造商:Samsung Semiconductor 功能描述:FLASH PARALLEL 3.3V 256MBIT 32MX8 10US 48TSOP - Tape and Reel

          

          
K9F5608U0C-PIB0
 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata

          

          
K9F5608U0C-V
 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit 16M x 16 Bit NAND Flash Memory

          

          
K9F5608U0C-VCB0
 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata

          

          
    
    
    
	
          	
    
    
     
     
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