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參數(shù)資料
| 型號： | K9F5616U0C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512Mb/256Mb 1.8V NAND Flash Errata |
| 中文描述： | 512Mb/256Mb 1.8 NAND閃存勘誤表 |
| 文件頁數(shù)： | 18/39頁 |
| 文件大?。?/td> | 655K |
| 代理商： | K9F5616U0C |
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K9F5616U0C-YCB0,YIB0,PCB0,PIB0
K9F5616U0C-DCB0,DIB0,HCB0,HIB0
FLASH MEMORY
17
K9F5608U0C-YCB0,YIB0,PCB0,PIB0
K9F5608U0C-DCB0,DIB0,HCB0,HIB0
K9F5608Q0C-DCB0,DIB0,HCB0,HIB0
K9F5616Q0C-DCB0,DIB0,HCB0,HIB0
K9F5608U0C-VCB0,VIB0,FCB0,FIB0
Samsung NAND Flash has two address pointer commands as a substitute for the most significant column address. ’00h’ command
sets the pointer to ’A’ area(0~255word), and ’50h’ command sets the pointer to ’B’ area(256~263word). With these commands, the
starting column address can be set to any of a whole page(0~263word). ’00h’ or ’50h’ is sustained until another address pointer com-
mand is inputted. To program data starting from ’A’ or ’B’ area, ’00h’ or ’50h’ command must be inputted before ’80h’ command is
written. A complete read operation prior to ’80h’ command is not necessary.
00h
(1) Command input sequence for programming ’A’ area
Address / Data input
80h
10h
00h
80h
10h
Address / Data input
The address pointer is set to ’A’ area(0~255), and sustained
50h
(2) Command input sequence for programming ’B’ area
Address / Data input
80h
10h
50h
80h
10h
Address / Data input
Only ’B’ area can be programmed.
’50h’ command can be omitted.
The address pointer is set to ’B’ area(256~263), and sustained
’00h’ command can be omitted.
It depends on how many data are inputted.
’A’,’B’ area can be programmed.
Pointer Operation of K9F5616X0C(X16)
Table 3. Destination of the pointer
Command
Pointer position
Area
00h
50h
0 ~ 255 word
256 ~ 263 word
main array(A)
spare array(B)
"A" area
(00h plane)
256 Word
"B" area
(50h plane)
8 Word
"A"
"B"
Internal
Page Register
Pointer select
command
(00h, 50h)
Pointer
Figure 5. Block Diagram of Pointer Operation
相關PDF資料 |
PDF描述 |
|---|---|
| K9F5616U0C-D | 512Mb/256Mb 1.8V NAND Flash Errata |
| K9F5616U0C-H | 512Mb/256Mb 1.8V NAND Flash Errata |
| K9F5616U0C-P | 512Mb/256Mb 1.8V NAND Flash Errata |
| K9F5616U0C-Y | 512Mb/256Mb 1.8V NAND Flash Errata |
| K9F5608Q0C-DCB0 | 512Mb/256Mb 1.8V NAND Flash Errata |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K9F5616U0C-D | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:32M x 8 Bit 16M x 16 Bit NAND Flash Memory |
| K9F5616U0C-DCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata |
| K9F5616U0C-DIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata |
| K9F5616U0C-H | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata |
| K9F5616U0C-HCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb/256Mb 1.8V NAND Flash Errata |
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