參數(shù)資料
型號(hào)： K9F6408U0C-T
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 8M x 8 Bit NAND Flash Memory
中文描述： 8米× 8位NAND閃存
文件頁數(shù)： 11/30頁
文件大?。?/td> 784K
代理商： K9F6408U0C-T
FLASH MEMORY
11
K9F6408U0C
VALID BLOCK
MODE SELECTION
NOTE
: 1. X can be V
IL
or V
IH.
2. WP should be biased to CMOS high or CMOS low for standby.
Program/Erase Characteristics
CLE
ALE
CE
WE
RE
WP
Mode
H
L
L
H
X
Read Mode
Command Input
L
H
L
H
X
Address Input(3clock)
H
L
L
H
H
Write Mode
Command Input
L
H
L
H
H
Address Input(3clock)
L
L
L
H
H
Data Input
L
L
L
H
X
Data Output
L
L
L
H
H
X
During Read(Busy) on K9F6408U0C_T,Q or K9F6408U0C_V,F
X
X
X
X
H
X
During Read(Busy) on the devices except K9F6408U0C_T,Q
and K9F6408U0C_V,F)
X
X
X
X
X
H
During Program(Busy)
X
X
X
X
X
H
During Erase(Busy)
X
X
(1)
X
X
X
L
Write Protect
X
X
H
X
X
0V/V
CC
(2)
Stand-by
CAPACITANCE
(
T
A
=25
°
C, V
CC
=3.3V, f=1.0MHz)
NOTE
: Capacitance is periodically sampled and not 100% tested.
Item
Symbol
Test Condition
Min
Max
Unit
Input/Output Capacitance
C
I/O
V
IL
=0V
-
10
pF
Input Capacitance
C
IN
V
IN
=0V
-
10
pF
NOTE
:
1. The
device
may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks is pre-
sented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits
. Do not erase or pro-
gram factory-marked bad blocks.
Refer to the attached technical notes for a appropriate management of invalid blocks.
2. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block, does not require Error Correction up to 1K program/erase
cycles.
AC TEST CONDITION
(K9F6408U0C-XCB0:TA=0 to 70
°
C, K9F6408U0C-XIB0:TA=-40 to 85
°
C
Parameter
Symbol
Min
Typ.
Max
Unit
Valid Block Number
N
VB
1014
1020
1024
Blocks
K9F6408U0C: Vcc=2.7V~3.6V unless otherwise noted)
Parameter
K9F6408U0C
Input Pulse Levels
0.4V to 2.4V
Input Rise and Fall Times
5ns
Input and Output Timing Levels
1.5V
K9F6408U0C:Output Load (Vcc
Q
:3.0V +/-10%)
1 TTL GATE and CL=50pF
K9F6408U0C:Output Load (Vcc
Q
:3.3V +/-10%)
1 TTL GATE and CL=100pF
NOTE
:
Typical program time is defined as the time within which more than 50% of the whole pages are programmed at Vcc of 3.3V and temperature of
25
°
C .
Parameter
Symbol
Min
Typ
Max
Unit
Program Time
t
PROG
-
200
500
μ
s
Number of Partial Program Cycles
in the Same Page
Main Array
Nop
-
-
2
cycles
Spare Array
-
-
3
cycles
Block Erase Time
t
BERS
-
2
3
ms
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參數(shù)描述
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