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參數(shù)資料
| 型號(hào)： | K9F6408U0C-T |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 8M x 8 Bit NAND Flash Memory |
| 中文描述： | 8米× 8位NAND閃存 |
| 文件頁數(shù)： | 28/30頁 |
| 文件大?。?/td> | 784K |
| 代理商： | K9F6408U0C-T |
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FLASH MEMORY
28
K9F6408U0C
Figure 9. Read ID Operation
READ ID
The device contains a product identification mode, initiated by writing 90h to the command register, followed by an address input of
00h. Two read cycles sequentially output the manufacture code(ECh), and the device code respectively. The command register
remains in Read ID mode until further commands are issued to it. Figure 9 shows the operation sequence.
CE
CLE
I/O
0
~
7
ALE
RE
WE
90h
00h
ECh
Device
Code*
Address. 1 cycle
Maker code
Device code
t
CEA
t
AR1
tREA
Figure 10. RESET Operation
RESET
The device offers a reset feature, executed by writing FFh to the command register. When the device is in Busy state during random
read, program or erase modes, the reset operation will abort these operation. The contents of memory cells being altered are no
longer valid, as the data will be partially programmed or erased. Internal address registers are cleared to "0"s and data registers to
"1"s. The command register is cleared to wait for the next command, and the Status Register is cleared to value C0h when WP is
high. Refer to table 3 for device status after reset operation. If the device is already in reset state a new reset command will not be
accepted to by the command register. The R/B pin transitions to low for t
RST
after the Reset command is written. Reset command is
not necessary for normal operation. Refer to Figure 10 below.
Table3. Device Status
After Power-up
After Reset
Operation Mode
Read 1
Waiting for next command
FFh
I/O
0
~
7
R/B
t
RST
t
CLR
Device
Device Code*
K9F6408U0C
E6h
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| K9F6408U0C-V | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory |
| K9F6408U0M-TCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory |
| K9F6408U0M-TIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory |
| K9F8008W0M- | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 8 bit NAND Flash Memory |
| K9F8008W0M-TCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 8 bit NAND Flash Memory |
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