參數(shù)資料
型號: K9F6408U0C-T
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 8M x 8 Bit NAND Flash Memory
中文描述: 8米× 8位NAND閃存
文件頁數(shù): 14/30頁
文件大小: 784K
代理商: K9F6408U0C-T
FLASH MEMORY
14
K9F6408U0C
NAND Flash Technical Notes
(Continued)
Program Flow Chart
Start
I/O 6 = 1
or R/B = 1
I/O 0 = 0
No
*
Write 80h
Write Address
Write Data
Write 10h
Read Status Registe
Program Completed
Program Error
Yes
No
Yes
Error in write or read operation
Within its life time, the additional invalid blocks may develop with NAND Flash memory. Refer to the qualification report for the actual
data.The following possible failure modes should be considered to implement a highly reliable system. In the case of status read fail-
ure after erase or program, block replacement should be done. In case of Read, ECC must be employed. To improve the efficiency of
memory space, it is recommended that the read or verification failure due to single bit error be reclaimed by ECC without any block
replacement. The said additional block failure rate does not include those reclaimed blocks.
Failure Mode
Detection and Countermeasure sequence
Write
Erase Failure
Status Read after Erase --> Block Replacement
Program Failure
Status Read after Program --> Block Replacement
Read
Single Bit Failure
Verify ECC -> ECC Correction
ECC
: Error Correcting Code --> Hamming Code etc.
Example) 1bit correction & 2bit detection
: If program operation results in an error, map out
the block including the page in error and copy the
*
target data to another block.
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