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參數(shù)資料
| 型號： | K9K1216D0C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory |
| 中文描述： | 6400 × 8位，32 × 16位NAND閃存 |
| 文件頁數(shù)： | 15/39頁 |
| 文件大?。?/td> | 953K |
| 代理商： | K9K1216D0C |
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FLASH MEMORY
15
K9K1216D0C
K9K1216U0C
K9K1208D0C
K9K1208U0C
K9K1208Q0C
K9K1216Q0C
NAND Flash Technical Notes
(Continued)
Error in write or read operation
Within its life time, the additional invalid blocks may develop with NAND Flash memory. Refer to the qualification report for the actual
data.The following possible failure modes should be considered to implement a highly reliable system. In the case of status read fail-
ure after erase or program, block replacement should be done. Because program status fail during a page program does not affect
the data of the other pages in the same block, block replacement can be executed with a page-sized buffer by finding an erased
empty block and reprogramming the current target data and copying the rest of the replaced block. In case of Read, ECC must be
employed. To improve the efficiency of memory space, it is recommended that the read or verification failure due to single bit error be
reclaimed by ECC without any block replacement. The said additional block failure rate does not include those reclaimed blocks.
Program Flow Chart
Start
I/O 6 = 1
or R/B = 1
I/O 0 = 0
No
*
Write 80h
Write Address
Write Data
Write 10h
Read Status Register
Program Completed
Program Error
Yes
No
Yes
Failure Mode
Detection and Countermeasure sequence
Write
Erase Failure
Status Read after Erase --> Block Replacement
Program Failure
Status Read after Program --> Block Replacement
Read
Single Bit Failure
Verify ECC -> ECC Correction
ECC
: Error Correcting Code --> Hamming Code etc.
Example) 1bit correction & 2bit detection
: If program operation results in an error, map out
the block including the page in error and copy the
*
target data to another block.
相關PDF資料 |
PDF描述 |
|---|---|
| K9K1208Q0C | 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory |
| K9K1208U0C | 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory |
| K9K1G08B0B | 128M x 8 Bit NAND Flash Memory |
| K9K1G08R0B | 128M x 8 Bit NAND Flash Memory |
| K9K1G08U0B | 128M x 8 Bit NAND Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K9K1216Q0C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit , 32M x 16 Bit NAND Flash Memory |
| K9K1216U0C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit , 32M x 16 Bit NAND Flash Memory |
| K9K1G08B0B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit NAND Flash Memory |
| K9K1G08Q0A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
| K9K1G08R0B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit NAND Flash Memory |
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