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參數(shù)資料
| 型號： | K9K1G16Q0A |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
| 中文描述： | 128M的× 8位/ 64米× 16位NAND閃存 |
| 文件頁數(shù)： | 10/43頁 |
| 文件大小： | 906K |
| 代理商： | K9K1G16Q0A |
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FLASH MEMORY
10
K9K1G08U0A
K9K1G08Q0A
K9K1G16U0A
K9K1G16Q0A
Preliminary
The device is arranged in eight 128Mbit memory planes. Each plane contains 1,024 blocks and 528 byte page registers. This allows
it to perform simultaneous page program and block erase by selecting one page or block from each plane. The block address map is
configured so that multi-plane program/erase operations can be executed for every four sequential blocks by dividing the memory
array into plane 0~3 or plane 4~7 separately. For example, multi-plane program/erase operations into plane 2,3,4 and 5 are prohib-
ited.
Figure 3. Memory Array Map
Plane 0
(1024 Block)
Plane 1
(1024 Block)
Plane 2
(1024 Block)
Plane 3
(1024 Block)
Page 0
Page 1
Page 31
Page 30
Memory Map
Block 0
Page 0
Page 1
Page 31
Page 30
Block 1
Page 0
Page 1
Page 31
Page 30
Block 2
Page 0
Page 1
Page 31
Page 30
Block 3
Page 0
Page 1
Page 31
Page 30
Block 4092
Page 0
Page 1
Page 31
Page 30
Block 4093
Page 0
Page 1
Page 31
Page 30
Block 4094
Page 0
Page 1
Page 31
Page 30
Block 4095
Page 0
Page 1
Page 31
Page 30
Block 4096
Page 0
Page 1
Page 31
Page 30
Block 4097
Page 0
Page 1
Page 31
Page 30
Block 4098
Page 0
Page 1
Page 31
Page 30
Block 4099
Page 0
Page 1
Page 31
Page 30
Block 8188
Page 0
Page 1
Page 31
Page 30
Block 8189
Page 0
Page 1
Page 31
Page 30
Block 8190
Page 0
Page 1
Page 31
Page 30
Block 8191
528byte Page Registers
528byte Page Registers
528byte Page Registers
528byte Page Registers
528byte Page Registers
528byte Page Registers
528byte Page Registers
528byte Page Registers
Plane 4
(1024 Block)
Plane 5
(1024 Block)
Plane 6
(1024 Block)
Plane 7
(1024 Block)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9K1G16U0A | 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
| K9K2G08U1A | 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory |
| K9F1G08R0A | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVP00; No. of Contacts:99; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight |
| K9K2G16Q0M-YIB0 | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G16U0M-PCB0 | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9K1G16U0A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
| K9K2G08Q0M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G08Q0M-P | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G08Q0M-PCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G08Q0M-PIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
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