參數(shù)資料
型號: K9K2G08U0M-FIB0
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
中文描述: 256M × 8位/ 128M的× 16位NAND閃存
文件頁數(shù): 28/38頁
文件大?。?/td> 734K
代理商: K9K2G08U0M-FIB0
FLASH MEMORY
28
K9K2G08Q0M-YCB0,YIB0,PCB0,PIB0
K9K2G08U0M-YCB0,YIB0,PCB0,PIB0
K9K2G16Q0M-YCB0,YIB0,PCB0,PIB0
K9K2G16U0M-YCB0,YIB0,PCB0,PIB0
K9K2G08U0M-VCB0,VIB0,FCB0,FIB0
Read ID Operation
CE
CLE
WE
ALE
RE
90h
Read ID Command
Maker Code Device Code
00h
ECh
Device
Code*
t
REA
Address. 1cycle
XXh
4th cyc.*
ID Defintition Table
90 ID : Access command = 90H
Description
1
st
Byte
2
nd
Byte
3
rd
Byte
4
th
Byte
Maker Code
Device Code
Don’t care
Page Size, Block Size, Spare Size, Organization
I/Ox
t
AR
Device
Device Code*(2nd Cycle)
4th Cycle*
K9K2G08Q0M
AAh
15h
K9K2G08U0M
DAh
15h
K9K2G16Q0M
BAh
55h
K9K2G16U0M
CAh
55h
相關(guān)PDF資料
PDF描述
K9K2G08U0M-PCB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08U0M-PIB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08U0M-VCB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08U0M-VIB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08U0M-YIB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9K2G08U0M-PCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08U0M-PCB000 制造商:Samsung Semiconductor 功能描述:
K9K2G08U0M-PIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08U0M-V 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08U0M-VCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory