參數(shù)資料
型號(hào)： K9K2G08U0M-FIB0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
中文描述： 256M × 8位/ 128M的× 16位NAND閃存
文件頁數(shù)： 31/38頁
文件大?。?/td> 734K
代理商： K9K2G08U0M-FIB0
FLASH MEMORY
31
K9K2G08Q0M-YCB0,YIB0,PCB0,PIB0
K9K2G08U0M-YCB0,YIB0,PCB0,PIB0
K9K2G16Q0M-YCB0,YIB0,PCB0,PIB0
K9K2G16U0M-YCB0,YIB0,PCB0,PIB0
K9K2G08U0M-VCB0,VIB0,FCB0,FIB0
Figure 7. Random Data Output In a Page
Address
5Cycles
00h
Data Output
R/B
RE
t
R
30h
Address
2Cycles
05h
E0h
Data Output
Data Field
Spare Field
Data Field
Spare Field
PAGE PROGRAM
The device is programmed basically on a page basis, but it does allow multiple partial page programing of a word or consecutive
bytes up to 2112(X8 device) or words up to 1056(X16 device), in a single page program cycle. The number of consecutive partial
page programming operation within the same page without an intervening erase operation must not exceed 4 times for main array(X8
device:1time/512byte, X16 device:1time/256word) and 4 times for spare array(X8 device:1time/16byte, X16 device:1time/8word). The
addressing should be done in sequential order in a block. A page program cycle consists of a serial data loading period in which up to
2112bytes(X8 device) or 1056words(X16 device) of data may be loaded into the data register, followed by a non-volatile programming
period where the loaded data is programmed into the appropriate cell.
The serial data loading period begins by inputting the Serial Data Input command(80h), followed by the five cycle address inputs and
then serial data loading. The words other than those to be programmed do not need to be loaded. The device supports random data
input in a page. The column address for the next data, which will be entered, may be changed to the address which follows random
data input command(85h). Random data input may be operated multiple times regardless of how many times it is done in a page.
The Page Program confirm command(10h) initiates the programming process. Writing 10h alone without previously entering the serial
data will not initiate the programming process. The internal write state controller automatically executes the algorithms and timings
necessary for program and verify, thereby freeing the system controller for other tasks. Once the program process starts, the Read
Status Register command may be entered to read the status register. The system controller can detect the completion of a program
cycle by monitoring the R/B output, or the Status bit(I/O 6) of the Status Register. Only the Read Status command and Reset com-
mand are valid while programming is in progress. When the Page Program is complete, the Write Status Bit(I/O 0) may be
checked(Figure 8). The internal write verify detects only errors for "1"s that are not successfully programmed to "0"s. The command
register remains in Read Status command mode until another valid command is written to the command register.
Figure 8. Program & Read Status Operation
80h
R/B
Address & Data Input
I/O
0
Pass
Data
10h
70h
Fail
t
PROG
I/Ox
I/Ox
Col Add1,2 & Row Add1,2,3
"0"
"1"
Col Add1,2 & Row Add1,2,3
相關(guān)PDF資料
PDF描述
K9K2G08U0M-PCB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08U0M-PIB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08U0M-VCB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08U0M-VIB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08U0M-YIB0 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9K2G08U0M-PCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08U0M-PCB000 制造商:Samsung Semiconductor 功能描述:
K9K2G08U0M-PIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08U0M-V 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08U0M-VCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
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