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參數(shù)資料
| 型號： | K9K2G08U0M-FIB0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| 中文描述： | 256M × 8位/ 128M的× 16位NAND閃存 |
| 文件頁數(shù)： | 36/38頁 |
| 文件大小： | 734K |
| 代理商： | K9K2G08U0M-FIB0 |
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FLASH MEMORY
36
K9K2G08Q0M-YCB0,YIB0,PCB0,PIB0
K9K2G08U0M-YCB0,YIB0,PCB0,PIB0
K9K2G16Q0M-YCB0,YIB0,PCB0,PIB0
K9K2G16U0M-YCB0,YIB0,PCB0,PIB0
K9K2G08U0M-VCB0,VIB0,FCB0,FIB0
Power-On Auto-Read
The device is designed to offer automatic reading of the first page without command and address input sequence during power-on.
An internal voltage detector enables auto-page read functions when Vcc reaches about 1.8V. PRE pin controls activation of auto-
page read function. Auto-page read function is enabled only when PRE pin is tied to V
cc.
Serial access may be done after power-on
without latency. Power-On Auto Read mode is available only on 3.3V device(K9K2GXXU0M).
Figure 16. Power-On Auto-Read
(3.3V device only)
V
CC
CE
CLE
I/O
X
ALE
RE
WE
1st
~ 1.8V
PRE
R/B
2nd
3rd
....
n th
≈
≈
≈
≈
≈
≈
≈
≈
t
R
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9K2G08U0M-PCB0 | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G08U0M-PIB0 | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G08U0M-VCB0 | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G08U0M-VIB0 | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G08U0M-YIB0 | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9K2G08U0M-PCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G08U0M-PCB000 | 制造商:Samsung Semiconductor 功能描述: |
| K9K2G08U0M-PIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G08U0M-V | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G08U0M-VCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
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