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參數(shù)資料
| 型號： | K9K2G08U0M-YCB0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| 中文描述： | 256M × 8位/ 128M的× 16位NAND閃存 |
| 文件頁數(shù)： | 8/38頁 |
| 文件大小： | 734K |
| 代理商： | K9K2G08U0M-YCB0 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁當前第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁
FLASH MEMORY
8
K9K2G08Q0M-YCB0,YIB0,PCB0,PIB0
K9K2G08U0M-YCB0,YIB0,PCB0,PIB0
K9K2G16Q0M-YCB0,YIB0,PCB0,PIB0
K9K2G16U0M-YCB0,YIB0,PCB0,PIB0
K9K2G08U0M-VCB0,VIB0,FCB0,FIB0
1K Words
32 Words
Figure 1-2. K9K2G16X0M (X16) Functional Block Diagram
Figure 2-2. K9K2G16X0M (X16) Array Organization
NOTE
: Column Address : Starting Address of the Register.
* L must be set to "Low".
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
I/O8 ~ 15
1st Cycle
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
*L
2nd Cycle
A
8
A
9
A
10
*L
*L
*L
*L
*L
*L
3rd Cycle
A
11
A
12
A
13
A
14
A
15
A
16
A
17
A
18
*L
4th Cycle
A
19
A
20
A
21
A
22
A
23
A
24
A
25
A
26
*L
5th Cycle
A
27
*L
*L
*L
*L
*L
*L
*L
*L
V
CC
V
SS
X-Buffers
Latches
& Decoders
Command
Register
I/O Buffers & Latches
Y-Buffers
Latches
& Decoders
Control Logic
& High Voltage
Generator
Global Buffers
Output
Driver
A
11
- A
27
A
0
- A
10
Command
CE
RE
WE
CLE
WP
I/0 0
I/0 15
V
CC
V
SS
128K Pages
(=2,048 Blocks)
1K Words
16 bit
32 Words
1 Block = 64 Pages
(64K + 2k) Word
I/O 0 ~ I/O 15
1 Page = (1K + 32)Words
1 Block = (1K + 32)Word x 64 Pages
= (64K + 2K) Words
1 Device = (1K+32)Word x 64Pages x 2048 Blocks
= 2112 Mbits
Row Address
Page Register
ALE PRE
2048M + 64M Bit
NAND Flash
ARRAY
(1024 + 32)Word x 131072
Y-Gating
Cache Register
Row Address
Column Address
Column Address
Data Register & S/A
Row Address
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9K2G08Q0M-P | DSUB 25 M PCR/A G |
| K9K2G08Q0M-PCB0 | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G08Q0M-PIB0 | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G16Q0M-PIB0 | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G08Q0M-Y | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9K2G08U0M-YIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
| K9K2G08U1A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit / 256M x 8 Bit NAND Flash Memory |
| K9K2G08X0A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
| K9K2G08X0A-J | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
| K9K2G16Q0M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
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