參數(shù)資料
型號(hào): KFG1216D2M-DIB
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: FLASH MEMORY
中文描述: 閃存
文件頁(yè)數(shù): 25/93頁(yè)
文件大?。?/td> 1219K
代理商: KFG1216D2M-DIB
OneNAND512/OneNAND1GDDP
FLASH MEMORY
25
NOTE:
- BI: Bad block Information
>Host can use complete spare area except BI and ECC code area. For example,
Host can write data to Spare area buffer except for the area controlled by ECC logic at program operation.
>In case of ’with ECC’ mode, OneNAND automatically generates ECC code for both main and spare data of memory during program operation
but does not update ECC code to spare bufferRAM during load operation.
>When loading/programming spare area, spare area BufferRAM address(BSA) and BufferRAM sector count(BSC) is chosen via Start buffer register
as it is.
Buf.
Word
Address
Byte
Address
F
E
D
C
B
A
9
8
7
6
5
4
3
2
1
0
DataS 1_3
8048h
10090h
BI
8049h
10092h
Managed by Internal ECC logic
804Ah
10094h
Reserved for the future use
Managed by Internal ECC logic
804Bh
10096h
Reserved for the current and future use
804Ch
10098h
ECC Code for Main area data (2
nd
)
ECC Code for Main area data (1
st
)
804Dh
1009Ah
ECC Code for Spare area data (1
st
)
ECC Code for Main area data (3
rd
)
804Eh
1009Ch
FFh(Reserved for the future use)
ECC Code for Spare area data (2
nd
)
804Fh
1009Eh
Free Usage
Equivalent to 1word of NAND Flash
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PDF描述
KFG1216D2M-DID FLASH MEMORY
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