參數(shù)資料
型號: KFG1216D2M-DID
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: FLASH MEMORY
中文描述: 閃存
文件頁數(shù): 81/93頁
文件大?。?/td> 1219K
代理商: KFG1216D2M-DID
OneNAND512/OneNAND1GDDP
FLASH MEMORY
81
Figure 29. Asynchronous Read Mode(AVD toggling)
NOTE:
VA=Valid Read Address, RD=Read Data.
t
OE
VA
Valid RD
t
OEZ
CE
OE
WE
A0-A15
CLK
V
IL
AVD
t
AA
Hi-Z
Hi-Z
RDY
t
AVDP
t
AAVDH
DQ0-DQ15
t
WEA
t
CEZ
Case 2 : AVD Transition occurs after CE is driven to Low and Valid Address Transition occurs before AVD is driven to Low
Case 3 : AVD Transition occur after CE is driven to Low and Valid Address Transition occurs after AVD is driven to Low
Figure 30. Asynchronous Read Mode(AVD toggling)
NOTE:
VA=Valid Read Address, RD=Read Data.
t
OE
VA
Valid RD
t
OEZ
CE
OE
WE
A0-A15
t
ACC
CLK
V
IL
AVD
t
AAVDS
Hi-Z
Hi-Z
RDY
t
AVDP
t
AAVDH
DQ0-DQ15
t
WEA
t
CEZ
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