參數(shù)資料
型號(hào)： KFG1216Q2A-FID6
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： FLASH MEMORY
中文描述： 閃存
文件頁數(shù)： 103/114頁
文件大?。?/td> 1382K
代理商： KFG1216Q2A-FID6
OneNAND512(KFG1216x2A-xxB5)
FLASH MEMORY
103
6.11 Cold Reset Timing
Note: 1) Bootcode copy operation starts 400us later than POR activation.
The system power should reach Vcc after POR triggering level(typ. 1.5V) within 400us for valid boot code data.
2) 1K bytes Bootcode copy takes 70us(estimated) from sector0 and sector1/page0/block0 of NAND Flash array to BootRAM.
Host can read Bootcode in BootRAM(1K bytes) after Bootcode copy completion.
3) INT register goes ‘Low’ to ‘High’ on the condition of ‘Bootcode-copy done’ and RP rising edge.
If RP goes ‘Low’ to ‘High’ before ‘Bootcode-copy done’, INT register goes to ‘Low’ to ‘High’ as soon as ‘Bootcode-copy done’
System Power
Sleep
Bootcode copy
Idle
Bootcode - copy done
POR triggering level
3)
2)
RP
INT
OneNAND
Operation
0 (default)
1
IOBE bit
1 (default)
INTpol bit
High-Z
1)
INT bit
0 (default)
1
相關(guān)PDF資料
PDF描述
KFG1216U2A FLASH MEMORY
KFG1216U2A-FEB6 FLASH MEMORY
KFG1216U2A-FED5 FLASH MEMORY
KFG1216U2A-FED6 FLASH MEMORY
KFG1216U2A-FIB5 FLASH MEMORY
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