參數(shù)資料
型號： KFG1G1612M-DED5
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： FLASH MEMORY(54MHz)
中文描述： 閃存（54MHz之間）
文件頁數(shù)： 10/125頁
文件大?。?/td> 1657K
代理商： KFG1G1612M-DED5
OneNAND1G(KFG1G16Q2M-DEB5)
FLASH MEMORY
10
OneNAND2G(KFH2G16Q2M-DEB5)
OneNAND4G(KFW4G16Q2M-DEB5)
B (capital letter)
Byte, 8bits
W (capital letter)
Word, 16bits
b (lower-case letter)
Bit
ECC
Error Correction Code
Calculated ECC
ECC that has been calculated during a load or program access
Written ECC
ECC that has been stored as data in the NAND Flash array or in the BufferRAM
BufferRAM
On-chip internal buffer consisting of BootRAM and DataRAM
BootRAM
A 1KB portion of the BufferRAM reserved for Boot Code buffering
DataRAM
A 4KB portion of the BufferRAM reserved for Data buffering
Sector
Part of a Page ; 512B for the main data area and 16B for the spare area.
It is also the minimum Load/Program/Copy-Back Program unit
during a 1~4 sector operation is available.
Data unit
Possible data unit to be read from memory to BufferRAM or to be programmed to memory.
- 528B of which 512B is in main area and 16B in spare area
- 1056B of which 1024B is in main area and 32B in spare area
- 1584B of which 1536B is in main area and 48B in spare area
- 2112B of which 2048B is in main area and 64B in spare area
2.2 Definitions
相關PDF資料
PDF描述
KFW4G16U2M-DID5 FLASH MEMORY(54MHz)
KFW4G16U2M-DID6 FLASH MEMORY(54MHz)
KFW1G1612M-DEB5 Coaxial Cable; Coaxial RG/U Type:223; Conductor Size AWG:19; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Approval Categories:UL AWM Style 1354; Cable/Wire MIL SPEC:MIL-C-17G; Conductor Material:Copper RoHS Compliant: Yes
KFG2G1612M-DEB5 Coaxial Cable; Coaxial RG/U Type:223; Impedance:50ohm; Conductor Size AWG:19; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Approval Categories:UL AWM Style 1354; Cable/Wire MIL SPEC:MIL-C-17G RoHS Compliant: Yes
KFH2G1612M-DEB5 Coaxial Cable; Coaxial RG/U Type:223; Impedance:50ohm; Conductor Size AWG:19; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Voltage Nom.:600V RoHS Compliant: Yes
相關代理商/技術參數(shù)
參數(shù)描述
KFG1G16D2M-DEB 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFG1G16D2M-DEB5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
KFG1G16D2M-DEB6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
KFG1G16D2M-DED 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFG1G16D2M-DED5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
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