參數(shù)資料
型號: KFG1G1612M-DED5
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: FLASH MEMORY(54MHz)
中文描述: 閃存(54MHz之間)
文件頁數(shù): 100/125頁
文件大小: 1657K
代理商: KFG1G1612M-DED5
OneNAND1G(KFG1G16Q2M-DEB5)
FLASH MEMORY
100
OneNAND2G(KFH2G16Q2M-DEB5)
OneNAND4G(KFW4G16Q2M-DEB5)
4.1 Absolute Maximum Ratings
NOTES
:
1. Minimum DC voltage is -0.5V on Input/ Output pins. During transitions, this level should not fall to POR level(typ. 1.5V). Maximum DC voltage is
Vcc+0.6V on input / output pins which, during transitions, may overshoot to Vcc+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
Voltage on any pin relative to V
SS
Vcc
Vcc
-0.5 to + 2.45
V
All Pins
V
IN
T
bias
-0.5 to + 2.45
Temperature Under Bias
Extended
-30 to +125
°
C
Storage Temperature
T
stg
-65 to +150
°
C
Short Circuit Output Current
I
OS
5
mA
Recommended Operating Temperature
T
A
(Extended Temp.)
-30 to +85
°
C
4.2 Operating Conditions
Voltage reference to GND
NOTES
:
1. The system power should reach 1.7V after POR triggering level(typ. 1.5V) within 400us.
2. Vcc-Core (or Vcc) should reach the operating voltage level prior to or at the same time as Vcc-IO (or Vccq).
Parameter
Symbol
1.8V Device
Unit
Min
Typ.
Max
Supply Voltage
V
CC-
core / Vcc
1.7
1.8
1.95
V
V
CC-
IO / Vccq
V
SS
0
0
0
V
4.0 DC CHARACTERISTICS
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KFH2G1612M-DEB5 Coaxial Cable; Coaxial RG/U Type:223; Impedance:50ohm; Conductor Size AWG:19; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Voltage Nom.:600V RoHS Compliant: Yes
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