參數(shù)資料
型號： KFG1G1612M-DED5
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： FLASH MEMORY(54MHz)
中文描述： 閃存（54MHz之間）
文件頁數(shù)： 71/125頁
文件大小： 1657K
代理商： KFG1G1612M-DED5
OneNAND1G(KFG1G16Q2M-DEB5)
FLASH MEMORY
71
OneNAND2G(KFH2G16Q2M-DEB5)
OneNAND4G(KFW4G16Q2M-DEB5)
A block that is in a locked-tight state can only be changed to lock state after a Cold or Warm Reset. Unlock and Lock command
sequences will not affect its state. This is an added level of write protection security.
A block must first be set to a locked state before it can be changed to locked-tight using the Lock-tight command. locked-tight blocks
will revert to a locked state following a Cold or Warm Reset.
Lock-Tight Command Sequence:
Start block address+Lock-tight block command (002Ch)
Locked-tight
3.4.4 NAND Flash Array Write Protection State Diagram
Power On
Start block address
+Unlock block Command
RP pin: High
&
Lock block Command
or
RP pin: High
&
Start block address
+Lock-tight block Command
RP pin: High
&
Start block address
Cold reset or
Warm reset
unlock
Lock
Lock
Lock-tight
Lock
Lock
Lock
Cold reset or
Warm reset
3.4.3.3 Locked-tight NAND Array Write Protection State
相關(guān)PDF資料
PDF描述
KFW4G16U2M-DID5 FLASH MEMORY(54MHz)
KFW4G16U2M-DID6 FLASH MEMORY(54MHz)
KFW1G1612M-DEB5 Coaxial Cable; Coaxial RG/U Type:223; Conductor Size AWG:19; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Approval Categories:UL AWM Style 1354; Cable/Wire MIL SPEC:MIL-C-17G; Conductor Material:Copper RoHS Compliant: Yes
KFG2G1612M-DEB5 Coaxial Cable; Coaxial RG/U Type:223; Impedance:50ohm; Conductor Size AWG:19; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Approval Categories:UL AWM Style 1354; Cable/Wire MIL SPEC:MIL-C-17G RoHS Compliant: Yes
KFH2G1612M-DEB5 Coaxial Cable; Coaxial RG/U Type:223; Impedance:50ohm; Conductor Size AWG:19; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Voltage Nom.:600V RoHS Compliant: Yes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KFG1G16D2M-DEB 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFG1G16D2M-DEB5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
KFG1G16D2M-DEB6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
KFG1G16D2M-DED 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
KFG1G16D2M-DED5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz)
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