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參數(shù)資料
| 型號(hào)： | KFG1G16D2M-DID5 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | FLASH MEMORY(54MHz) |
| 中文描述： | 閃存（54MHz之間） |
| 文件頁(yè)數(shù)： | 25/93頁(yè) |
| 文件大小： | 1219K |
| 代理商： | KFG1G16D2M-DID5 |
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OneNAND512/OneNAND1GDDP
FLASH MEMORY
25
NOTE:
- BI: Bad block Information
>Host can use complete spare area except BI and ECC code area. For example,
Host can write data to Spare area buffer except for the area controlled by ECC logic at program operation.
>In case of ’with ECC’ mode, OneNAND automatically generates ECC code for both main and spare data of memory during program operation
but does not update ECC code to spare bufferRAM during load operation.
>When loading/programming spare area, spare area BufferRAM address(BSA) and BufferRAM sector count(BSC) is chosen via Start buffer register
as it is.
Buf.
Word
Address
Byte
Address
F
E
D
C
B
A
9
8
7
6
5
4
3
2
1
0
DataS 1_3
8048h
10090h
BI
8049h
10092h
Managed by Internal ECC logic
804Ah
10094h
Reserved for the future use
Managed by Internal ECC logic
804Bh
10096h
Reserved for the current and future use
804Ch
10098h
ECC Code for Main area data (2
nd
)
ECC Code for Main area data (1
st
)
804Dh
1009Ah
ECC Code for Spare area data (1
st
)
ECC Code for Main area data (3
rd
)
804Eh
1009Ch
FFh(Reserved for the future use)
ECC Code for Spare area data (2
nd
)
804Fh
1009Eh
Free Usage
Equivalent to 1word of NAND Flash
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| KFH1G16D2M-DIB5 | FLASH MEMORY(54MHz) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KFG1G16D2M-DID6 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:FLASH MEMORY(54MHz) |
| KFG1G16Q2A-DEB5000 | 制造商:Samsung Semiconductor 功能描述: |
| KFG1G16Q2A-DEB6000 | 制造商:Samsung Semiconductor 功能描述: |
| KFG1G16Q2A-DEB8000 | 制造商:Samsung Semiconductor 功能描述:1GNOFLASHADE-MUXED SLC W/X1663 FBGA(10X13) - Bulk |
| KFG1G16Q2B-DEB8000 | 制造商:Samsung SDI 功能描述:NAND Flash Serial 1.8V 1Gbit 64M x 16bit 8ns 63-Pin FBGA Tray |
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